Introduction of F4-TCNQ/MoO3 layers for thermoelectric devices based on pentacene

Shuang Hong Wu, Qi Sheng Zhang, Ryosuke Nakamichi, Masatsugu Taneda, Chihaya Adachi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.

Original languageEnglish
Article number098502
JournalChinese Physics B
Volume23
Issue number9
DOIs
Publication statusPublished - Jan 1 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Introduction of F<sub>4</sub>-TCNQ/MoO<sub>3</sub> layers for thermoelectric devices based on pentacene'. Together they form a unique fingerprint.

  • Cite this