Introduction of In or Ga as second dopant to BaZr0.9Y0.1O3 - δ to achieve better sinterability

Naoki Ito, Hiroshige Matsumoto, Yuya Kawasaki, Sachio Okada, Tatsumi Ishihara

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51 Citations (Scopus)

Abstract

BaZr1 - xYxO3 - δ is a proton-conducting oxide that has both high ionic conductivity and good chemical stability, but disadvantageously has low sinterability. In this work, two co-dopant systems, BaZr0.9(Y1 - xMx)0.1O3 - δ (M = Ga, In), were studied with the aim of improving sinterability. In both systems, sinterability was markedly improved. Although the addition of Ga markedly decreased the conductivity of BaZr1 - xYxO3 - δ, the addition of In did not decrease the conductivity significantly. It was shown that BaZr0.9Y0.05In0.05O3 - δ is a practically useful material with a good combination of conductivity and sinterability.

Original languageEnglish
Pages (from-to)324-329
Number of pages6
JournalSolid State Ionics
Volume179
Issue number9-10
DOIs
Publication statusPublished - May 15 2008

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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