Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures

Seung Hyun Kim, Parsian K. Mohseni, Yi Song, Tatsumi Ishihara, Xiuling Li

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Original languageEnglish
Pages (from-to)641-648
Number of pages8
JournalNano Letters
Volume15
Issue number1
DOIs
Publication statusPublished - Jan 14 2015

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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