Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures

Seung Hyun Kim, Parsian K. Mohseni, Yi Song, Tatsumi Ishihara, Xiuling Li

    Research output: Contribution to journalArticlepeer-review

    55 Citations (Scopus)

    Abstract

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

    Original languageEnglish
    Pages (from-to)641-648
    Number of pages8
    JournalNano Letters
    Volume15
    Issue number1
    DOIs
    Publication statusPublished - Jan 14 2015

    All Science Journal Classification (ASJC) codes

    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanical Engineering

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