Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack

Y. Nagatomi; Y. Nagaoka; K. Yamamoto; D. Wang; H. Nakashima

doi:10.1149/06406.0261ecst

Investigation of Al-PMA effect on Al₂O₃/GeO_X/Ge gate stack

Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We investigated the Al post metallization annealing (PMA) effect on Al₂O₃/GeO_X/Ge gate stacks. The Al-PMA is effective for Al₂O₃/GeO_X/Ge gate stacks, similar to the case of SiO₂/GeO₂ gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al₂O₃ film on the S/D side wall, resulting in a decrease in insulating quality of Al₂O₃ film. To solve this problem, we demonstrated a method for depositing a thin SiO₂ film on the S/D side wall.

Original language	English
Pages (from-to)	261-266
Number of pages	6
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0261ecst
Publication status	Published - 2014
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: Oct 5 2014 → Oct 9 2014

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack",

abstract = "We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.",

author = "Y. Nagatomi and Y. Nagaoka and K. Yamamoto and D. Wang and H. Nakashima",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0261ecst",

language = "English",

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journal = "ECS Transactions",

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TY - JOUR

T1 - Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack

AU - Nagatomi, Y.

AU - Nagaoka, Y.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.

AB - We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.

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EP - 266

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JF - ECS Transactions

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T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Investigation of Al-PMA effect on Al₂O₃/GeO_X/Ge gate stack

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