We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.
|Number of pages||6|
|Publication status||Published - 2014|
|Event||6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico|
Duration: Oct 5 2014 → Oct 9 2014
All Science Journal Classification (ASJC) codes