Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack

Y. Nagatomi, Y. Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400°C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.

Original languageEnglish
Pages (from-to)261-266
Number of pages6
JournalECS Transactions
Volume64
Issue number6
DOIs
Publication statusPublished - Jan 1 2014
Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Oct 5 2014Oct 9 2014

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Metallizing
Annealing
Interface states
Energy gap
Thin films
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack. / Nagatomi, Y.; Nagaoka, Y.; Yamamoto, Keisuke; Wang, Dong; Nakashima, Hiroshi.

In: ECS Transactions, Vol. 64, No. 6, 01.01.2014, p. 261-266.

Research output: Contribution to journalConference article

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