Abstract
High-injection carrier lifetimes in thin 4H-SiC epilayers were investigated by using time-resolved photoluminescence method. It was found that the lifetimes in thin 4H-SiC epilayers were much shorter than that in relatively thick epilayers. Surface passivation using SiO2 and SiN films, as well as numerical simulation based on a diffusion equation were performed in order to clarify lifetime limiting factors. A comparison between experimental and theoretical results reveals that the major cause of extremely short carrier lifetimes in thin 4H-SiC epilayers is short bulk lifetime rather than recombination at the epilayer surface or in the substrate.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 |
| Editors | Jia Zhou, Ting-Ao Tang |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479932962 |
| DOIs | |
| Publication status | Published - Jan 23 2014 |
| Event | 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: Oct 28 2014 → Oct 31 2014 |
Publication series
| Name | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 |
|---|
Other
| Other | 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 |
|---|---|
| Country | China |
| City | Guilin |
| Period | 10/28/14 → 10/31/14 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
- Computer Science Applications
Cite this
Investigation of carrier lifetimes in a thin 4H-SiC epilayer. / Yang, Haigui; Gao, Jinsong; Nakashima, Hiroshi.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021654 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Investigation of carrier lifetimes in a thin 4H-SiC epilayer
AU - Yang, Haigui
AU - Gao, Jinsong
AU - Nakashima, Hiroshi
PY - 2014/1/23
Y1 - 2014/1/23
N2 - High-injection carrier lifetimes in thin 4H-SiC epilayers were investigated by using time-resolved photoluminescence method. It was found that the lifetimes in thin 4H-SiC epilayers were much shorter than that in relatively thick epilayers. Surface passivation using SiO2 and SiN films, as well as numerical simulation based on a diffusion equation were performed in order to clarify lifetime limiting factors. A comparison between experimental and theoretical results reveals that the major cause of extremely short carrier lifetimes in thin 4H-SiC epilayers is short bulk lifetime rather than recombination at the epilayer surface or in the substrate.
AB - High-injection carrier lifetimes in thin 4H-SiC epilayers were investigated by using time-resolved photoluminescence method. It was found that the lifetimes in thin 4H-SiC epilayers were much shorter than that in relatively thick epilayers. Surface passivation using SiO2 and SiN films, as well as numerical simulation based on a diffusion equation were performed in order to clarify lifetime limiting factors. A comparison between experimental and theoretical results reveals that the major cause of extremely short carrier lifetimes in thin 4H-SiC epilayers is short bulk lifetime rather than recombination at the epilayer surface or in the substrate.
UR - http://www.scopus.com/inward/record.url?scp=84946686955&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946686955&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2014.7021654
DO - 10.1109/ICSICT.2014.7021654
M3 - Conference contribution
T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
A2 - Zhou, Jia
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
ER -