Investigation of carrier lifetimes in a thin 4H-SiC epilayer

Haigui Yang, Jinsong Gao, Hiroshi Nakashima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    High-injection carrier lifetimes in thin 4H-SiC epilayers were investigated by using time-resolved photoluminescence method. It was found that the lifetimes in thin 4H-SiC epilayers were much shorter than that in relatively thick epilayers. Surface passivation using SiO2 and SiN films, as well as numerical simulation based on a diffusion equation were performed in order to clarify lifetime limiting factors. A comparison between experimental and theoretical results reveals that the major cause of extremely short carrier lifetimes in thin 4H-SiC epilayers is short bulk lifetime rather than recombination at the epilayer surface or in the substrate.

    Original languageEnglish
    Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
    EditorsJia Zhou, Ting-Ao Tang
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781479932962
    DOIs
    Publication statusPublished - Jan 23 2014
    Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
    Duration: Oct 28 2014Oct 31 2014

    Publication series

    NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

    Other

    Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
    Country/TerritoryChina
    CityGuilin
    Period10/28/1410/31/14

    All Science Journal Classification (ASJC) codes

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Computer Science Applications

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