Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

Ken Watanabe, Takeo Ohsawa, Isao Sakaguchi, Oliver Bierwagen, Mark E. White, Min Ying Tsai, Ryosuke Takahashi, Emily M. Ross, Yutaka Adachi, James S. Speck, Hajime Haneda, Naoki Ohashi

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Abstract

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO2) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO2. The H-concentration of the In-doped SnO2 films increased to (1-2)×1019cm-3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

Original languageEnglish
Article number132110
JournalApplied Physics Letters
Volume104
Issue number13
DOIs
Publication statusPublished - Mar 31 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Watanabe, K., Ohsawa, T., Sakaguchi, I., Bierwagen, O., White, M. E., Tsai, M. Y., Takahashi, R., Ross, E. M., Adachi, Y., Speck, J. S., Haneda, H., & Ohashi, N. (2014). Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions. Applied Physics Letters, 104(13), [132110]. https://doi.org/10.1063/1.4870425