The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO2) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO2. The H-concentration of the In-doped SnO2 films increased to (1-2)×1019cm-3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)