Investigation of electrical resistivities of nanograined Si produced by high-pressure torsion

Bumsoo Chon, Yoshifumi Ikoma, Masamichi Kohno, Junichiro Shimoi, Zenji Horita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationProceedings of the International Workshop on Giant Straining Process for Advanced Materials (GSAM2016)
Pages53-54
Publication statusPublished - Oct 2016

Cite this

Chon, B., Ikoma, Y., Kohno, M., Shimoi, J., & Horita, Z. (2016). Investigation of electrical resistivities of nanograined Si produced by high-pressure torsion. In Proceedings of the International Workshop on Giant Straining Process for Advanced Materials (GSAM2016) (pp. 53-54)

Investigation of electrical resistivities of nanograined Si produced by high-pressure torsion. / Chon, Bumsoo; Ikoma, Yoshifumi; Kohno, Masamichi; Shimoi, Junichiro; Horita, Zenji.

Proceedings of the International Workshop on Giant Straining Process for Advanced Materials (GSAM2016). 2016. p. 53-54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chon, B, Ikoma, Y, Kohno, M, Shimoi, J & Horita, Z 2016, Investigation of electrical resistivities of nanograined Si produced by high-pressure torsion. in Proceedings of the International Workshop on Giant Straining Process for Advanced Materials (GSAM2016). pp. 53-54.
Chon B, Ikoma Y, Kohno M, Shimoi J, Horita Z. Investigation of electrical resistivities of nanograined Si produced by high-pressure torsion. In Proceedings of the International Workshop on Giant Straining Process for Advanced Materials (GSAM2016). 2016. p. 53-54
Chon, Bumsoo ; Ikoma, Yoshifumi ; Kohno, Masamichi ; Shimoi, Junichiro ; Horita, Zenji. / Investigation of electrical resistivities of nanograined Si produced by high-pressure torsion. Proceedings of the International Workshop on Giant Straining Process for Advanced Materials (GSAM2016). 2016. pp. 53-54
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