Investigation of enhanced impact ionization in uniaxially strained Si n-channel metal oxide semiconductor field effect transistor

Shinichiro Adachi, Tanemasa Asano

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The impact ionization rate in uniaxially strained silicon is evaluated from viewpoints of the ionization threshold and maximum electric field Em for the first time. Strain and temperature dependences of β are investigated on the basis of the change in slope in a universal relation while Em, which is also dependent on strain and temperature, is investigated on the basis of the change in saturation voltage VDSAT. The impact ionization rate is a function of β and Em such that we also evaluated strain and temperature dependence of multiplication factor M-1 (= /sub=/ D) to determine the major concern of change in impact ionization rate. The result shows that the change in Em due to the change in potential drop along the channel is the major concern in a uniaxially strained silicon n-channel metal oxide semiconductor field effect transistor (nMOSFET).

Original languageEnglish
Article number04DC14
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - Apr 1 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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