TY - JOUR
T1 - Investigation of exotic electronic properties on rare-earth & actinide compounds under high pressure
AU - Honda, Fuminori
AU - Li, Dexin
AU - Okauchi, Keigo
AU - Homma, Yoshiya
AU - Nakamura, Ai
AU - Aoki, Dai
N1 - Funding Information:
Authors would like to thank Mr. M. Watanabe, Mr. M. Nagai, Dr. K. Shirasaki, and Dr. T. Yamamura for their technical support and Prof. Onuki for fruitful discussions. This research was carried out at the International Research Center for Nuclear Materials Science, Institute for Materials Research, Tohoku University. This work was supported by JSPS KAKENHI Grant Numbers 15K05156 and 15H05884.
Publisher Copyright:
© 2016 Materials Research Society.
PY - 2016
Y1 - 2016
N2 - We have synthesized and investigated electronic properties of several non-centrosymmetric actinide compounds, which do not have an inversion center in the crystal structure globally or locally, under high pressure. The Néel temperature of an antiferromagnet UIrSi3 with globally non-centrosymmetric structure increases with increasing pressure at a rate of 2.5 K/GPa up to 5 GPa. On the other hand, T Ns of U2Rh3Si5 and U2Ir3Si5, which are locally non-centrosymmetric compounds, decrease with -1 K/GPa and -0.5 K/GPa with increasing pressure, respectively. Here, U2Ir3Si5 is a new antiferromagnet crystallizing in the U2Co3Si5-type of orthorhombic structure. Below T N = 36.5 K, U2Ir3Si5 shows magnetic order-order transition at T 0 = 26.1 K with a first-order nature. Electrical resistivity in U2Ir3Si5 shows semiconducting-like behavior due to the formation of the super-zone gap in the antiferromagnetic state. T N and T 0 as well as semi-conducting-like behavior in resistivity are suppressed by external pressure.
AB - We have synthesized and investigated electronic properties of several non-centrosymmetric actinide compounds, which do not have an inversion center in the crystal structure globally or locally, under high pressure. The Néel temperature of an antiferromagnet UIrSi3 with globally non-centrosymmetric structure increases with increasing pressure at a rate of 2.5 K/GPa up to 5 GPa. On the other hand, T Ns of U2Rh3Si5 and U2Ir3Si5, which are locally non-centrosymmetric compounds, decrease with -1 K/GPa and -0.5 K/GPa with increasing pressure, respectively. Here, U2Ir3Si5 is a new antiferromagnet crystallizing in the U2Co3Si5-type of orthorhombic structure. Below T N = 36.5 K, U2Ir3Si5 shows magnetic order-order transition at T 0 = 26.1 K with a first-order nature. Electrical resistivity in U2Ir3Si5 shows semiconducting-like behavior due to the formation of the super-zone gap in the antiferromagnetic state. T N and T 0 as well as semi-conducting-like behavior in resistivity are suppressed by external pressure.
UR - http://www.scopus.com/inward/record.url?scp=85041292786&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041292786&partnerID=8YFLogxK
U2 - 10.1557/adv.2016.373
DO - 10.1557/adv.2016.373
M3 - Article
AN - SCOPUS:85041292786
VL - 1
SP - 2975
EP - 2986
JO - MRS Advances
JF - MRS Advances
SN - 2059-8521
IS - 44
ER -