Investigation of gan solution growth processes on ga- and n-faces by molecular dynamics simulation

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Shigeo Kotake, Yasuyuki Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)


We carried out the molecular dynamics simulation of the solution growth of GaN and investigated the growth processes on Ga- and N-faces. An empirical potential function of the Brenner potential was used for the simulations. The simulation cell consisted of GaN substrates with Ga- and N-faces and Ga solution including N atoms. The results showed that the growth surface on the Ga-face laterally developed from a two-dimensional nucleus and became flat. On the other hand, the growth surface on the N-face developed by adhesive growth and became rough.

Original languageEnglish
Article number01AF06
JournalJapanese journal of applied physics
Issue number1 PART 2
Publication statusPublished - Jan 1 2012


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this