Investigation of gan solution growth processes on ga- and n-faces by molecular dynamics simulation

We carried out the molecular dynamics simulation of the solution growth of GaN and investigated the growth processes on Ga- and N-faces. An empirical potential function of the Brenner potential was used for the simulations. The simulation cell consisted of GaN substrates with Ga- and N-faces and Ga solution including N atoms. The results showed that the growth surface on the Ga-face laterally developed from a two-dimensional nucleus and became flat. On the other hand, the growth surface on the N-face developed by adhesive growth and became rough.