TY - JOUR
T1 - Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering
AU - Charoenyuenyao, Peerasil
AU - Chaleawpong, Rawiwan
AU - Borwornpornmetee, Nattakorn
AU - Paosawatyanyong, Boonchoat
AU - Sittimart, Phongsaphak
AU - Yoshitake, Tsuyoshi
AU - Promros, Nathaporn
N1 - Funding Information:
The current research work was achieved with the gracious support of the Research Unit of Integrated Science for Electronics, Materials, and Industry (ISEMI), Faculty of Science, King Mongkut's Institute of Technology Ladkrabang ( KMITL ). The funding for this research was provided by the Academic Research Fund, Faculty of Science, KMITL under grant numbers 2562-01-05-29 , 2562-01-05-44 , and 2563-02-05-36 .
Funding Information:
The current research work was achieved with the gracious support of the Research Unit of Integrated Science for Electronics, Materials, and Industry (ISEMI), Faculty of Science, King Mongkut's Institute of Technology Ladkrabang (KMITL). The funding for this research was provided by the Academic Research Fund, Faculty of Science, KMITL under grant numbers 2562-01-05-29, 2562-01-05-44, and 2563-02-05-36.
Publisher Copyright:
© 2022
PY - 2022/8/1
Y1 - 2022/8/1
N2 - Using facing-targets sputtering, semiconducting iron disilicide (β-FeSi2) film layers were sputtered and coated on Si wafers owning (111) orientation. Under experimental conditions, the heating temperatures of the substrate (Tsubstrate) were varied at 525 °C, 550 °C, 600 °C and 660 °C. The acquired XRD patterns indicated a strong β(202/220) peak of around 29.1° for the β-FeSi2 films prepared at a Tsubstrate of at least 600 °C. The β-FeSi2 film surface prepared at a Tsubstrate of 525 °C comprised several crystallites, which were arranged to form a grain format at a higher Tsubstrate. The root mean square roughness for the film surface prepared at a Tsubstrate of 525 °C was 0.49 nm, where it increased to 0.98 nm, 2.39 nm, and 4.23 nm at Tsubstrate of 550 °C, 600 °C, and 660 °C, respectively. The films prepared at a Tsubstrate of 525 °C exhibited an average contact angle (θCA) of 91.15°, and improved to 103.80° after employing a Tsubstrate of 660 °C. These results hinted at the possibility of employing the β-FeSi2 films prepared at all Tsubstrate in the hydrophobic surface application. The estimated hardness and elastic modulus of the β-FeSi2 films prepared at Tsubstrate of 525 °C were 12.78 GPa and 190.98 GPa, respectively, which increased to 21.27 GPa and 248.67 GPa, respectively, for the films prepared at 660 °C. According to mechanical results, the β-FeSi2 films prepared at 660 °C exhibited the potential to be developed for use in hard coating application.
AB - Using facing-targets sputtering, semiconducting iron disilicide (β-FeSi2) film layers were sputtered and coated on Si wafers owning (111) orientation. Under experimental conditions, the heating temperatures of the substrate (Tsubstrate) were varied at 525 °C, 550 °C, 600 °C and 660 °C. The acquired XRD patterns indicated a strong β(202/220) peak of around 29.1° for the β-FeSi2 films prepared at a Tsubstrate of at least 600 °C. The β-FeSi2 film surface prepared at a Tsubstrate of 525 °C comprised several crystallites, which were arranged to form a grain format at a higher Tsubstrate. The root mean square roughness for the film surface prepared at a Tsubstrate of 525 °C was 0.49 nm, where it increased to 0.98 nm, 2.39 nm, and 4.23 nm at Tsubstrate of 550 °C, 600 °C, and 660 °C, respectively. The films prepared at a Tsubstrate of 525 °C exhibited an average contact angle (θCA) of 91.15°, and improved to 103.80° after employing a Tsubstrate of 660 °C. These results hinted at the possibility of employing the β-FeSi2 films prepared at all Tsubstrate in the hydrophobic surface application. The estimated hardness and elastic modulus of the β-FeSi2 films prepared at Tsubstrate of 525 °C were 12.78 GPa and 190.98 GPa, respectively, which increased to 21.27 GPa and 248.67 GPa, respectively, for the films prepared at 660 °C. According to mechanical results, the β-FeSi2 films prepared at 660 °C exhibited the potential to be developed for use in hard coating application.
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U2 - 10.1016/j.mssp.2022.106604
DO - 10.1016/j.mssp.2022.106604
M3 - Article
AN - SCOPUS:85127183557
VL - 146
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
M1 - 106604
ER -