TY - JOUR
T1 - Investigation of oxygen distribution in electromagnetic CZ-Si melts with a transverse magnetic field using 3D global modeling
AU - Liu, Lijun
AU - Nakano, Satoshi
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by a grant-in-aid for Scientific Research (B) 14350010 and a grant-in-aid for the creation of innovation through business-academy-public sector cooperation from the Japanese Ministry of Education, Science, Sports and Culture.
PY - 2007/2/1
Y1 - 2007/2/1
N2 - Three-dimensional (3D) analysis was carried out for oxygen transport in silicon melts of a Czochralski (CZ) growth process with electromagnetic fields. The system with electromagnetic fields was established with a transverse magnetic field and an injected electric current applied on the melt surface. The melt flow and thermal field in the growth furnace were numerically obtained with a recently developed 3D global model. The influence of electrode position and electric current direction on the oxygen distribution and concentration in the melt as well as on the growth interface was investigated. The heat transfer and mass transfer in the melt were also analyzed to clarify the mechanisms. The results showed that control of the oxygen distribution and concentration on the crystal growth interface is possible by appropriate positioning of the electrode on the melt surface and appropriate selection of the electric current direction. The results also showed that an electromagnetic CZ process (EMCZ) is superior to a transverse magnetic field-applied CZ process (TMCZ) and a conventional CZ process for controlling oxygen distribution in a silicon crystal grown from melt.
AB - Three-dimensional (3D) analysis was carried out for oxygen transport in silicon melts of a Czochralski (CZ) growth process with electromagnetic fields. The system with electromagnetic fields was established with a transverse magnetic field and an injected electric current applied on the melt surface. The melt flow and thermal field in the growth furnace were numerically obtained with a recently developed 3D global model. The influence of electrode position and electric current direction on the oxygen distribution and concentration in the melt as well as on the growth interface was investigated. The heat transfer and mass transfer in the melt were also analyzed to clarify the mechanisms. The results showed that control of the oxygen distribution and concentration on the crystal growth interface is possible by appropriate positioning of the electrode on the melt surface and appropriate selection of the electric current direction. The results also showed that an electromagnetic CZ process (EMCZ) is superior to a transverse magnetic field-applied CZ process (TMCZ) and a conventional CZ process for controlling oxygen distribution in a silicon crystal grown from melt.
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U2 - 10.1016/j.jcrysgro.2006.10.247
DO - 10.1016/j.jcrysgro.2006.10.247
M3 - Article
AN - SCOPUS:33846580617
SN - 0022-0248
VL - 299
SP - 48
EP - 58
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -