Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

K. Matsunaga, Terutake Hayashi, Syuhei Kurokawa, H. Yokoo, N. Hasegawa, M. Nishikino, T. Kumada, T. Otobe, Y. Matsukawa, Y. Takaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.

Original languageEnglish
Title of host publicationX-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers
PublisherSpringer Science and Business Media, LLC
Pages321-326
Number of pages6
Volume202
ISBN (Print)9783319730240
DOIs
Publication statusPublished - Jan 1 2018
Event15th International Conference on X-Ray Lasers, ICXRL 2016 - Nara, Japan
Duration: May 22 2016May 27 2016

Other

Other15th International Conference on X-Ray Lasers, ICXRL 2016
CountryJapan
CityNara
Period5/22/165/27/16

Fingerprint

ablation
fluence
pulses
excitation
energy absorption
yield point
lasers
penetration
wafers
damage

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Matsunaga, K., Hayashi, T., Kurokawa, S., Yokoo, H., Hasegawa, N., Nishikino, M., ... Takaya, Y. (2018). Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. In X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers (Vol. 202, pp. 321-326). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-73025-7_48

Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. / Matsunaga, K.; Hayashi, Terutake; Kurokawa, Syuhei; Yokoo, H.; Hasegawa, N.; Nishikino, M.; Kumada, T.; Otobe, T.; Matsukawa, Y.; Takaya, Y.

X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. Vol. 202 Springer Science and Business Media, LLC, 2018. p. 321-326.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsunaga, K, Hayashi, T, Kurokawa, S, Yokoo, H, Hasegawa, N, Nishikino, M, Kumada, T, Otobe, T, Matsukawa, Y & Takaya, Y 2018, Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. in X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. vol. 202, Springer Science and Business Media, LLC, pp. 321-326, 15th International Conference on X-Ray Lasers, ICXRL 2016, Nara, Japan, 5/22/16. https://doi.org/10.1007/978-3-319-73025-7_48
Matsunaga K, Hayashi T, Kurokawa S, Yokoo H, Hasegawa N, Nishikino M et al. Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. In X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. Vol. 202. Springer Science and Business Media, LLC. 2018. p. 321-326 https://doi.org/10.1007/978-3-319-73025-7_48
Matsunaga, K. ; Hayashi, Terutake ; Kurokawa, Syuhei ; Yokoo, H. ; Hasegawa, N. ; Nishikino, M. ; Kumada, T. ; Otobe, T. ; Matsukawa, Y. ; Takaya, Y. / Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam. X-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers. Vol. 202 Springer Science and Business Media, LLC, 2018. pp. 321-326
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