Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

K. Matsunaga, T. Hayashi, S. Kurokawa, H. Yokoo, N. Hasegawa, M. Nishikino, T. Kumada, T. Otobe, Y. Matsukawa, Y. Takaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.

Original languageEnglish
Title of host publicationX-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers
EditorsTetsuya Kawachi, Sergei V. Bulanov, Hiroyuki Daido, Yoshiaki Kato
PublisherSpringer Science and Business Media, LLC
Pages321-326
Number of pages6
ISBN (Print)9783319730240
DOIs
Publication statusPublished - 2018
Event15th International Conference on X-Ray Lasers, ICXRL 2016 - Nara, Japan
Duration: May 22 2016May 27 2016

Publication series

NameSpringer Proceedings in Physics
Volume202
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Other

Other15th International Conference on X-Ray Lasers, ICXRL 2016
CountryJapan
CityNara
Period5/22/165/27/16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam'. Together they form a unique fingerprint.

Cite this