Tungsten oxide (WO3) thin films were produced by pulsed laser deposition and the effect of temperature on their structure studied. Characterization of PLD WO3 thin films as a function of growth temperature using X-ray diffraction (XRD) and Raman spectroscopy (RS) indicated that the films grown at room temperature were nearly stoichiometric and amorphous. The structural order improves with the increase in temperature. WO3 thin films formed at temperatures ≥ 400°C were non-stoichiometric with oxygen deficiency. The amorphous to polycrystalline (monoclinic) structural transition occurs at a growth temperature of 300°C. copyright The Electrochemical Society.
|Number of pages||6|
|Publication status||Published - Dec 1 2006|
|Event||Electrochromics for the Energy Efficiency - 208th Electrochemical Society Meeting - Los Angeles, United States|
Duration: Oct 16 2005 → Oct 21 2005
All Science Journal Classification (ASJC) codes