Investigation of temperature induced structural transformations in tungsten oxide (WO3) thin films

C. V. Ramana, S. Utsunomiya, C. M. Julien, U. Becker

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Tungsten oxide (WO3) thin films were produced by pulsed laser deposition and the effect of temperature on their structure studied. Characterization of PLD WO3 thin films as a function of growth temperature using X-ray diffraction (XRD) and Raman spectroscopy (RS) indicated that the films grown at room temperature were nearly stoichiometric and amorphous. The structural order improves with the increase in temperature. WO3 thin films formed at temperatures ≥ 400°C were non-stoichiometric with oxygen deficiency. The amorphous to polycrystalline (monoclinic) structural transition occurs at a growth temperature of 300°C. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalECS Transactions
Volume1
Issue number15
DOIs
Publication statusPublished - Dec 1 2006
Externally publishedYes
EventElectrochromics for the Energy Efficiency - 208th Electrochemical Society Meeting - Los Angeles, United States
Duration: Oct 16 2005Oct 21 2005

Fingerprint

Oxide films
Tungsten
Thin films
Growth temperature
Pulsed laser deposition
Temperature
Raman spectroscopy
X ray diffraction
Oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Investigation of temperature induced structural transformations in tungsten oxide (WO3) thin films. / Ramana, C. V.; Utsunomiya, S.; Julien, C. M.; Becker, U.

In: ECS Transactions, Vol. 1, No. 15, 01.12.2006, p. 37-42.

Research output: Contribution to journalConference article

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