Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation

Ryo Takigawa, Hiroki Kawano, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated.

Original languageEnglish
Article number088002
JournalJapanese Journal of Applied Physics
Volume56
Issue number8
DOIs
Publication statusPublished - Aug 1 2017

Fingerprint

Laser beam effects
wafers
irradiation
lasers
voids
Nanostructures
Fusion reactions
cracks
fusion
Cracks
composite materials
Composite materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation. / Takigawa, Ryo; Kawano, Hiroki; Ikenoue, Hiroshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 56, No. 8, 088002, 01.08.2017.

Research output: Contribution to journalArticle

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