The origin of vertical crosstalk (CT) was investigated experimentally and theoretically for an inorganic black matrix (BM) (amorphous-SiGe:H) on the TFT array of a 10.4-in. VGA LCD driven by a vertical-line-inversion method. It was found that there were two kinds of CT: electrically induced CT and optically induced CT. The first type was mainly due to capacitive coupling between a data line and an indium tin oxide (ITO) pixel electrode through the BM. It was calculated that a BM sheet resistance of more than 1015 Ω/□ was needed to eliminate this kind of CT. The second type was due to low optical density (OD) of the BM, and it was found that an OD of 2.3 was necessary to eliminate it.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering