TY - JOUR
T1 - Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs
AU - Yang, H.
AU - Gao, J.
AU - Nakashima, H.
N1 - Funding Information:
This work was supported by a Science and Technology Innovation Project ( Y3293UM130 ), a Science and Technology Development Project ( Y3453UM130 ) of Jilin Province, a Science and Technology Innovation Project ( Y3CX1SS143 ) of CIOMP, and a National Natural Science Foundation of China ( 61306125 ).
PY - 2014/10
Y1 - 2014/10
N2 - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.
AB - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.
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U2 - 10.1016/j.mssp.2014.05.025
DO - 10.1016/j.mssp.2014.05.025
M3 - Article
AN - SCOPUS:84903149537
VL - 26
SP - 614
EP - 619
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 1
ER -