Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

H. Yang, J. Gao, H. Nakashima

    Research output: Contribution to journal › Article

    1 Citation (Scopus)

    Abstract

    Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

    Original languageEnglish
    Pages (from-to)614-619
    Number of pages6
    JournalMaterials Science in Semiconductor Processing
    Volume26
    Issue number1
    DOIs
    Publication statusPublished - Oct 2014

    Fingerprint

    Zirconium
    field effect transistors
    MOSFET devices
    metal oxide semiconductors
    Sputter deposition
    Electric properties
    electrical properties
    Doping (additives)
    Impurities
    impurities
    Electrons
    Substrates
    electrons

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs. / Yang, H.; Gao, J.; Nakashima, H.

    In: Materials Science in Semiconductor Processing, Vol. 26, No. 1, 10.2014, p. 614-619.

    Research output: Contribution to journal › Article

    Yang, H, Gao, J & Nakashima, H 2014, 'Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs', Materials Science in Semiconductor Processing, vol. 26, no. 1, pp. 614-619. https://doi.org/10.1016/j.mssp.2014.05.025
    Yang H, Gao J, Nakashima H. Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs. Materials Science in Semiconductor Processing. 2014 Oct;26(1):614-619. https://doi.org/10.1016/j.mssp.2014.05.025
    Yang, H. ; Gao, J. ; Nakashima, H. / Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs. In: Materials Science in Semiconductor Processing. 2014 ; Vol. 26, No. 1. pp. 614-619.
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    abstract = "Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.",
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    AB - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

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