Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

H. Yang; J. Gao; H. Nakashima

doi:10.1016/j.mssp.2014.05.025

Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

H. Yang, J. Gao, H. Nakashima

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

Original language	English
Pages (from-to)	614-619
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	26
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.05.025
Publication status	Published - Oct 2014

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{a1b99f982cff4f5c9fe6023a974b9fbc,

title = "Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs",

abstract = "Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.",

author = "H. Yang and J. Gao and H. Nakashima",

year = "2014",

month = oct,

doi = "10.1016/j.mssp.2014.05.025",

language = "English",

volume = "26",

pages = "614--619",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

AU - Yang, H.

AU - Gao, J.

AU - Nakashima, H.

PY - 2014/10

Y1 - 2014/10

N2 - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

AB - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

UR - http://www.scopus.com/inward/record.url?scp=84903149537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903149537&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.05.025

DO - 10.1016/j.mssp.2014.05.025

M3 - Article

AN - SCOPUS:84903149537

VL - 26

SP - 614

EP - 619

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 1

ER -