Investigation of ZrGe Schottky source/drain on n-Ge substrates

Haigui Yang, Jinsong Gao, Hiroshi Nakashima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

    Original languageEnglish
    Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
    EditorsJia Zhou, Ting-Ao Tang
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781479932962
    DOIs
    Publication statusPublished - Jan 23 2014
    Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
    Duration: Oct 28 2014Oct 31 2014

    Publication series

    NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

    Other

    Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
    CountryChina
    CityGuilin
    Period10/28/1410/31/14

    All Science Journal Classification (ASJC) codes

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Computer Science Applications

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  • Cite this

    Yang, H., Gao, J., & Nakashima, H. (2014). Investigation of ZrGe Schottky source/drain on n-Ge substrates. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021628] (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021628