@inproceedings{114c39decf7c48f4bfa7353c09919ba2,
title = "Investigation of ZrGe Schottky source/drain on n-Ge substrates",
abstract = "Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.",
author = "Haigui Yang and Jinsong Gao and Hiroshi Nakashima",
year = "2014",
month = jan,
day = "23",
doi = "10.1109/ICSICT.2014.7021628",
language = "English",
series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Jia Zhou and Ting-Ao Tang",
booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
address = "United States",
note = "2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",
}