Investigation of ZrGe Schottky source/drain on n-Ge substrates

Haigui Yang; Jinsong Gao; Hiroshi Nakashima

doi:10.1109/ICSICT.2014.7021628

Investigation of ZrGe Schottky source/drain on n-Ge substrates

Haigui Yang, Jinsong Gao, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021628
Publication status	Published - Jan 23 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: Oct 28 2014 → Oct 31 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country	China
City	Guilin
Period	10/28/14 → 10/31/14

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Computer Science Applications

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10.1109/ICSICT.2014.7021628

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Yang, H., Gao, J., & Nakashima, H. (2014). Investigation of ZrGe Schottky source/drain on n-Ge substrates. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021628] (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021628

Investigation of ZrGe Schottky source/drain on n-Ge substrates. / Yang, Haigui; Gao, Jinsong; Nakashima, Hiroshi.

Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021628 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, H, Gao, J & Nakashima, H 2014, Investigation of ZrGe Schottky source/drain on n-Ge substrates. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021628, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 10/28/14. https://doi.org/10.1109/ICSICT.2014.7021628

Yang H, Gao J, Nakashima H. Investigation of ZrGe Schottky source/drain on n-Ge substrates. In Zhou J, Tang T-A, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021628. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). https://doi.org/10.1109/ICSICT.2014.7021628

Yang, Haigui ; Gao, Jinsong ; Nakashima, Hiroshi. / Investigation of ZrGe Schottky source/drain on n-Ge substrates. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

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title = "Investigation of ZrGe Schottky source/drain on n-Ge substrates",

abstract = "Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.",

author = "Haigui Yang and Jinsong Gao and Hiroshi Nakashima",

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note = "2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

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N2 - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

AB - Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

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Investigation of ZrGe Schottky source/drain on n-Ge substrates

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