Investigations of Cu filling in through-Si via holes using direct electroless plating on CVD-W

F. Inoue, M. Koyanagi, T. Fukushima, Kazuhiro Yamamoto, S. Tanaka, Z. Wang, S. Shingubara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to realize low resistance through-Si via (TSV) electrodes, Cu electroplating is one of the most promising methods. However, with an increase of the aspect ratio of TSV, a formation of conductive seed layer prior to Cu electroplating is becoming more and more difficult. We propose an alternative approach using the electroless plating of Cu, which utilize displacement plating without catalyst. This method is effective for fabricating a low resistance TSV when combined with a barrier layer which is composed of tungsten (W). We found that an addition of Cl ions drastically suppressed the pinch-off at the entrance of the TSV, and it enabled conformal Cu deposition for high aspect ratio TSVs.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
Pages507-511
Number of pages5
Publication statusPublished - 2009
Externally publishedYes
EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
Duration: Sep 23 2008Sep 25 2008

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
CountryUnited States
CitySan Diego, CA
Period9/23/089/25/08

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

Cite this

Inoue, F., Koyanagi, M., Fukushima, T., Yamamoto, K., Tanaka, S., Wang, Z., & Shingubara, S. (2009). Investigations of Cu filling in through-Si via holes using direct electroless plating on CVD-W. In Advanced Metallization Conference 2008, AMC 2008 (pp. 507-511)