Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

X. Q. Shen, P. Ramvall, P. Riblet, Y. Aoyagi, K. Hosi, S. Tanaka, I. Suemune

Research output: Contribution to journalConference article

4 Citations (Scopus)


Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.

Original languageEnglish
Pages (from-to)396-400
Number of pages5
JournalJournal of Crystal Growth
Issue number2-3
Publication statusPublished - Feb 2000
Externally publishedYes
EventThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
Duration: Jul 28 1999Jul 30 1999


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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