TY - JOUR
T1 - Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
AU - Shen, X. Q.
AU - Ramvall, P.
AU - Riblet, P.
AU - Aoyagi, Y.
AU - Hosi, K.
AU - Tanaka, S.
AU - Suemune, I.
N1 - Funding Information:
The authors would like to thank H. Hirayama for useful discussion and help in this work. This work was supported by Grant-in-Aid for Developmental Scientific Research No. C09650374 from the Ministry of Education, Science, Sports and Culture, Japan and by the Science and Technology Agency (STA) of Japan.
PY - 2000/2
Y1 - 2000/2
N2 - Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.
AB - Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.
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U2 - 10.1016/S0022-0248(99)00578-3
DO - 10.1016/S0022-0248(99)00578-3
M3 - Conference article
AN - SCOPUS:0034140644
SN - 0022-0248
VL - 209
SP - 396
EP - 400
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2-3
T2 - The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques
Y2 - 28 July 1999 through 30 July 1999
ER -