Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

X. Q. Shen, P. Ramvall, P. Riblet, Y. Aoyagi, K. Hosi, Tanaka Satoru, I. Suemune

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.

Original languageEnglish
Pages (from-to)396-400
Number of pages5
JournalJournal of Crystal Growth
Volume209
Issue number2-3
DOIs
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
Duration: Jul 28 1999Jul 30 1999

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Gas source molecular beam epitaxy
Electric properties
molecular beam epitaxy
Optical properties
electrical properties
optical properties
gases
Electron mobility
Hall effect
electron mobility
Luminescence
Doping (additives)
luminescence
Defects
defects
Substrates

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy. / Shen, X. Q.; Ramvall, P.; Riblet, P.; Aoyagi, Y.; Hosi, K.; Satoru, Tanaka; Suemune, I.

In: Journal of Crystal Growth, Vol. 209, No. 2-3, 01.01.2000, p. 396-400.

Research output: Contribution to journalConference article

Shen, X. Q. ; Ramvall, P. ; Riblet, P. ; Aoyagi, Y. ; Hosi, K. ; Satoru, Tanaka ; Suemune, I. / Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy. In: Journal of Crystal Growth. 2000 ; Vol. 209, No. 2-3. pp. 396-400.
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AU - Shen, X. Q.

AU - Ramvall, P.

AU - Riblet, P.

AU - Aoyagi, Y.

AU - Hosi, K.

AU - Satoru, Tanaka

AU - Suemune, I.

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AB - Optical and electrical properties of GaN films grown on α-Al2O3 (0 0 0 1) substrates by GSMBE using In-doping method were investigated. It was found that both of them were improved, compared to those of a nondoped GaN one. μ-PL results at 20 K indicated that In-doped films emit luminescence more uniformly than that of a nondoped one. Furthermore, Hall effect measurements at 300 K showed higher electron mobility of In-doped samples than that of a nondoped one. It is suggested that the presence of In during the growth of GaN films plays a role in reducing the number of structural imperfections to improve the optical and electrical properties.

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