Invited paper: Enhanced long-term stabilities in fluorescent and phosphorescent organic light emitting device

Hideyuki Murata; Toshinori Matsushima

doi:10.1889/1.3256876

Invited paper: Enhanced long-term stabilities in fluorescent and phosphorescent organic light emitting device

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, we have investigate that the degradation mechanism of OLEDs using Alq₃ and FIrpic as emitting materials. For the Alq₃ device, ultra-thin layers of MoO₃ significantly enhance the device durability. The optimized MoO₃ thickness was 0.75 nm, realizing the lowest voltage and the longest lifetime. We found that the device stabilities strongly depend on the process pressure during the device fabrication. In both fluorescent and phosphorescent emitting materials, the devices fabricated under UHV conditions demonstrated excellent long-term stabilities.

Original language	English
Pages (from-to)	685-686
Number of pages	2
Journal	Digest of Technical Papers - SID International Symposium
Volume	40
Issue number	1
DOIs	https://doi.org/10.1889/1.3256876
Publication status	Published - Jan 1 2009
Externally published	Yes
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: Oct 15 2009 → Oct 16 2009

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1889/1.3256876

Fingerprint Dive into the research topics of 'Invited paper: Enhanced long-term stabilities in fluorescent and phosphorescent organic light emitting device'. Together they form a unique fingerprint.

Cite this

@article{d999a550337741febc6cd6bc867ed2c7,

title = "Invited paper: Enhanced long-term stabilities in fluorescent and phosphorescent organic light emitting device",

abstract = "In this paper, we have investigate that the degradation mechanism of OLEDs using Alq3 and FIrpic as emitting materials. For the Alq3 device, ultra-thin layers of MoO3 significantly enhance the device durability. The optimized MoO3 thickness was 0.75 nm, realizing the lowest voltage and the longest lifetime. We found that the device stabilities strongly depend on the process pressure during the device fabrication. In both fluorescent and phosphorescent emitting materials, the devices fabricated under UHV conditions demonstrated excellent long-term stabilities.",

author = "Hideyuki Murata and Toshinori Matsushima",

year = "2009",

month = jan,

day = "1",

doi = "10.1889/1.3256876",

language = "English",

volume = "40",

pages = "685--686",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

note = "2009 Vehicles and Photons Symposium ; Conference date: 15-10-2009 Through 16-10-2009",

}

TY - JOUR

T1 - Invited paper

T2 - 2009 Vehicles and Photons Symposium

AU - Murata, Hideyuki

AU - Matsushima, Toshinori

PY - 2009/1/1

Y1 - 2009/1/1

N2 - In this paper, we have investigate that the degradation mechanism of OLEDs using Alq3 and FIrpic as emitting materials. For the Alq3 device, ultra-thin layers of MoO3 significantly enhance the device durability. The optimized MoO3 thickness was 0.75 nm, realizing the lowest voltage and the longest lifetime. We found that the device stabilities strongly depend on the process pressure during the device fabrication. In both fluorescent and phosphorescent emitting materials, the devices fabricated under UHV conditions demonstrated excellent long-term stabilities.

AB - In this paper, we have investigate that the degradation mechanism of OLEDs using Alq3 and FIrpic as emitting materials. For the Alq3 device, ultra-thin layers of MoO3 significantly enhance the device durability. The optimized MoO3 thickness was 0.75 nm, realizing the lowest voltage and the longest lifetime. We found that the device stabilities strongly depend on the process pressure during the device fabrication. In both fluorescent and phosphorescent emitting materials, the devices fabricated under UHV conditions demonstrated excellent long-term stabilities.

UR - http://www.scopus.com/inward/record.url?scp=85072731510&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072731510&partnerID=8YFLogxK

U2 - 10.1889/1.3256876

DO - 10.1889/1.3256876

M3 - Conference article

AN - SCOPUS:85072731510

VL - 40

SP - 685

EP - 686

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 1

Y2 - 15 October 2009 through 16 October 2009

ER -