Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

Xun Yi, Gou Nakagawa, Hiroaki Ozawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Asano Tanemasa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.

Original languageEnglish
Article number098003
JournalJapanese journal of applied physics
Volume50
Issue number9 PART 1
DOIs
Publication statusPublished - Sep 1 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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