Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

Xun Yi, Gou Nakagawa, Hiroaki Ozawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.

Original languageEnglish
Article number098003
JournalJapanese Journal of Applied Physics
Volume50
Issue number9 PART 1
DOIs
Publication statusPublished - Sep 1 2011

Fingerprint

Single-walled carbon nanotubes (SWCN)
Thin film transistors
Ion bombardment
Contacts (fluid mechanics)
Ion beams
bombardment
Argon
transistors
ion beams
carbon nanotubes
argon
thin films
Contact resistance
ions
contact resistance
transmission lines
Electric lines
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor. / Yi, Xun; Nakagawa, Gou; Ozawa, Hiroaki; Fujigaya, Tsuyohiko; Nakashima, Naotoshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 50, No. 9 PART 1, 098003, 01.09.2011.

Research output: Contribution to journalArticle

Yi, Xun ; Nakagawa, Gou ; Ozawa, Hiroaki ; Fujigaya, Tsuyohiko ; Nakashima, Naotoshi ; Asano, Tanemasa. / Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 9 PART 1.
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