Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

Xun Yi; Gou Nakagawa; Hiroaki Ozawa; Tsuyohiko Fujigaya; Naotoshi Nakashima; Asano Tanemasa

doi:10.1143/JJAP.50.098003

Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

Xun Yi, Gou Nakagawa, Hiroaki Ozawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Asano Tanemasa

Integrated Electronic Systems

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.

Original language	English
Article number	098003
Journal	Japanese journal of applied physics
Volume	50
Issue number	9 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.098003
Publication status	Published - Sept 2011

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{d685047e8b2d45ddac631f05b7c08607,

title = "Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor",

abstract = "Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.",

author = "Xun Yi and Gou Nakagawa and Hiroaki Ozawa and Tsuyohiko Fujigaya and Naotoshi Nakashima and Asano Tanemasa",

year = "2011",

month = sep,

doi = "10.1143/JJAP.50.098003",

language = "English",

volume = "50",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "9 PART 1",

}

TY - JOUR

T1 - Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

AU - Yi, Xun

AU - Nakagawa, Gou

AU - Ozawa, Hiroaki

AU - Fujigaya, Tsuyohiko

AU - Nakashima, Naotoshi

AU - Tanemasa, Asano

PY - 2011/9

Y1 - 2011/9

N2 - Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.

AB - Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.

UR - http://www.scopus.com/inward/record.url?scp=80053009599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053009599&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.098003

DO - 10.1143/JJAP.50.098003

M3 - Article

AN - SCOPUS:80053009599

SN - 0021-4922

VL - 50

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 PART 1

M1 - 098003

ER -

Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

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