Ion-beam enhanced stress-relaxation of SiGe on SiO2

M. Tanaka, Taizoh Sadoh, M. Ninomiya, M. Nakamae, T. Enokida, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.

Original languageEnglish
Title of host publicationGrowth, Modification and Analysis by Ion Beams at the Nanoscale
Pages50-54
Number of pages5
Volume908
Publication statusPublished - Dec 1 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

Fingerprint

Defect density
stress relaxation
Stress relaxation
Ion beams
Dosimetry
Condensation
ion beams
insulators
Irradiation
Annealing
Oxidation
condensation
dosage
oxidation
irradiation
annealing
defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Tanaka, M., Sadoh, T., Ninomiya, M., Nakamae, M., Enokida, T., & Miyao, M. (2005). Ion-beam enhanced stress-relaxation of SiGe on SiO2. In Growth, Modification and Analysis by Ion Beams at the Nanoscale (Vol. 908, pp. 50-54)

Ion-beam enhanced stress-relaxation of SiGe on SiO2. / Tanaka, M.; Sadoh, Taizoh; Ninomiya, M.; Nakamae, M.; Enokida, T.; Miyao, M.

Growth, Modification and Analysis by Ion Beams at the Nanoscale. Vol. 908 2005. p. 50-54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, M, Sadoh, T, Ninomiya, M, Nakamae, M, Enokida, T & Miyao, M 2005, Ion-beam enhanced stress-relaxation of SiGe on SiO2. in Growth, Modification and Analysis by Ion Beams at the Nanoscale. vol. 908, pp. 50-54, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.
Tanaka M, Sadoh T, Ninomiya M, Nakamae M, Enokida T, Miyao M. Ion-beam enhanced stress-relaxation of SiGe on SiO2. In Growth, Modification and Analysis by Ion Beams at the Nanoscale. Vol. 908. 2005. p. 50-54
Tanaka, M. ; Sadoh, Taizoh ; Ninomiya, M. ; Nakamae, M. ; Enokida, T. ; Miyao, M. / Ion-beam enhanced stress-relaxation of SiGe on SiO2. Growth, Modification and Analysis by Ion Beams at the Nanoscale. Vol. 908 2005. pp. 50-54
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AB - The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.

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