Ion-beam enhanced stress-relaxation of SiGe on SiO2

M. Tanaka; T. Sadoh; M. Ninomiya; M. Nakamae; T. Enokida; M. Miyao

doi:10.1557/proc-0908-oo05-21

Ion-beam enhanced stress-relaxation of SiGe on SiO₂

M. Tanaka, T. Sadoh, M. Ninomiya, M. Nakamae, T. Enokida, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H⁺ irradiation with medium dose (5×10¹⁵ cm^-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<10⁶ cm^-2) has been realized by this technique.

Original language	English
Title of host publication	Growth, Modification and Analysis by Ion Beams at the Nanoscale
Publisher	Materials Research Society
Pages	50-54
Number of pages	5
ISBN (Print)	1558998632, 9781558998636
DOIs	https://doi.org/10.1557/proc-0908-oo05-21
Publication status	Published - 2005
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	908
ISSN (Print)	0272-9172

Other

Other	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-0908-oo05-21

Cite this

Tanaka, M, Sadoh, T, Ninomiya, M, Nakamae, M, Enokida, T & Miyao, M 2005, Ion-beam enhanced stress-relaxation of SiGe on SiO₂. in Growth, Modification and Analysis by Ion Beams at the Nanoscale. Materials Research Society Symposium Proceedings, vol. 908, Materials Research Society, pp. 50-54, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05. https://doi.org/10.1557/proc-0908-oo05-21

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abstract = "The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.",

author = "M. Tanaka and T. Sadoh and M. Ninomiya and M. Nakamae and T. Enokida and M. Miyao",

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AU - Tanaka, M.

AU - Sadoh, T.

AU - Ninomiya, M.

AU - Nakamae, M.

AU - Enokida, T.

AU - Miyao, M.

PY - 2005

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N2 - The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.

AB - The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.

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