TY - JOUR
T1 - Ion-beam-induced amorphous structures in silicon carbide
AU - Bae, In Tae
AU - Ishimaru, Manabu
AU - Hirotsu, Yoshihiko
AU - Matsumura, Syo
AU - Sickafus, Kurt E.
N1 - Funding Information:
This work was sponsored by the US Department of Energy (DOE), Office of Basic Sciences, Division of Materials Sciences, and the Center of Excellence (COE) program and Special Coordination Fund for Promoting Science and Technology on ‘Nanohetero Metallic Materials’ from the Science and Technology Agency and a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan.
PY - 2003/5
Y1 - 2003/5
N2 - Atomistic structure of ion-beam-induced amorphous silicon carbide (a-SiC) has been investigated by cross-sectional transmission electron microscopy. The electron intensities of halo patterns recorded on imaging plates were digitized quantitatively to extract reduced interference functions. We demonstrated the relationship between maximum scattering vector (Qmax) measured in scattering experiments and the resolution of the corresponding pair-distribution function by changing Qmax values from 160 to 230 nm-1. The results revealed that the C-C peak becomes broadened and eventually a shoulder as the Qmax value becomes shorter, indicating that Qmax values of <160 nm-1 measured in previous studies are not enough to detect C-C homonuclear bonds in a-SiC. We are the first to reveal the existence of C-C and Si-Si homonuclear bonds in a-SiC using a diffraction technique.
AB - Atomistic structure of ion-beam-induced amorphous silicon carbide (a-SiC) has been investigated by cross-sectional transmission electron microscopy. The electron intensities of halo patterns recorded on imaging plates were digitized quantitatively to extract reduced interference functions. We demonstrated the relationship between maximum scattering vector (Qmax) measured in scattering experiments and the resolution of the corresponding pair-distribution function by changing Qmax values from 160 to 230 nm-1. The results revealed that the C-C peak becomes broadened and eventually a shoulder as the Qmax value becomes shorter, indicating that Qmax values of <160 nm-1 measured in previous studies are not enough to detect C-C homonuclear bonds in a-SiC. We are the first to reveal the existence of C-C and Si-Si homonuclear bonds in a-SiC using a diffraction technique.
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U2 - 10.1016/S0168-583X(03)00905-4
DO - 10.1016/S0168-583X(03)00905-4
M3 - Conference article
AN - SCOPUS:0038412712
VL - 206
SP - 974
EP - 978
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
T2 - 13th International conference on Ion beam modification of Mate
Y2 - 1 September 2002 through 6 September 2002
ER -