Ion-beam induced defect formation in α-alumina with applied electric field

T. Higuchi, K. Yasuda, K. Tanaka, K. Shiiyama, C. Kinoshita

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

An attempt is made to understand the kinetic behavior of radiation-induced defects in α-Al2O3 irradiated with applied electric fields. To this end, a special device is developed for ion-beam irradiation on insulating ceramics at temperatures up to 920 K and with applied electric fields to 300 kV/m. We have found that electric fields of 100 and 300 kV/m influence the nucleation-and-growth process of defect clusters in α-Al2O3 irradiated with 100 keV He+ ions. The electric fields reduce the formation of interstitial-type dislocation loops at 760 K and retard the formation of defect clusters (probably vacancy-type clusters) at 870 K. Results are discussed in terms of the directed migration of interstitials and the recombination rate of vacancies and interstitials.

Original languageEnglish
Pages (from-to)103-108
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - May 1 2003
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sep 1 2002Sep 6 2002

Fingerprint

Ion beams
Alumina
aluminum oxides
ion beams
Electric fields
Defects
interstitials
electric fields
defects
Vacancies
Nucleation
Irradiation
nucleation
ceramics
Radiation
Kinetics
irradiation
Ions
kinetics
radiation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Ion-beam induced defect formation in α-alumina with applied electric field. / Higuchi, T.; Yasuda, K.; Tanaka, K.; Shiiyama, K.; Kinoshita, C.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 01.05.2003, p. 103-108.

Research output: Contribution to journalConference article

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AU - Higuchi, T.

AU - Yasuda, K.

AU - Tanaka, K.

AU - Shiiyama, K.

AU - Kinoshita, C.

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