Ion-beam irradiation effect on solid-phase growth of β-FeSi2

Y. Murakami, H. Kido, A. Kenjo, T. Sadoh, T. Yoshitake, M. Miyao

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

Effects of Ar+ ion-beam irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 25 keV Ar+(5.0 × 1015 cm-2) at a temperature of 25°C (sample A) or 400°C (sample B), and subsequently annealed at 800°C. A reference was obtained after annealing without irradiation (sample C). X-ray diffraction results indicated that β-FeSi2 was formed after annealing at 800°C for 5 h, and the formation rate was the fastest for sample A and the slowest for sample C, i.e., A > B≫C. However, Auger electron spectroscopy measurements showed that atomic mixing at Fe/Si interface before annealing was B > A≫C. These results suggested that amorphization of Si substrate, in addition to atomic mixing, enhanced the solid-phase growth of β-FeSi2, which was confirmed experimentally. Moreover, a direct band gap of 0.89 eV was observed for the sample with pre-amorphization by the Fourier-transform infrared (FT-IR) spectroscopy measurements. These enhancement effects were attributed to that the phase transition to β-FeSi2 was accelerated by atomic arrangement induced during annihilation of excess vacancies. These enhancement effects can be utilized for nano-fabrication of β-FeSi2 by using focused ion-beam irradiation.

Original languageEnglish
Pages (from-to)505-508
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume16
Issue number3-4
DOIs
Publication statusPublished - Mar 2003
EventSymposium H of the Spring Meeting of the Europe (E-MRS-02H) - Strasbourgh, France
Duration: Jun 18 2002Jun 21 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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