Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700 °C. Significant enhancement of crystal nucleation was observed under ion irradiation (25 keV, 1×1016 Ar+ cm-2). As a result, nucleation at a temperature lower than that of the softening of soda-lime glass (450 °C) becomes possible. In addition, nuclei growth along the  and  directions was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry