Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Hiroshi Ishiwara, Noriyuki Kaifu, Tanemasa Asano

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The crystalline quality of preferentially (111) oriented BaF2 films grown on amorphous SiO2 has been investigated by ion channeling measurements, as well as x-ray diffraction analyses and transmission electron microscopy (TEM). The films are grown by vacuum deposition onto heated (500-750°C) Si substrates covered with SiO2 films. It has been found that the channeling effect of MeV ions occurs in BaF2 films on SiO2 and that the minimum yield in the films grown at 700°C is as low as 9% near the surface. It has also been observed by TEM and x-ray analyses that the average size of the crystallites and the spread of the crystallite orientation in the good films are about 400 nm and 0.4°, respectively.

Original languageEnglish
Pages (from-to)1184-1186
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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