Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

Yoshihito Maeda; Kazumasa Narumi; Seiji Sakai; Yoshikazu Terai; Kohei Hamaya; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2011.05.024

Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

Yoshihito Maeda, Kazumasa Narumi, Seiji Sakai, Yoshikazu Terai, Kohei Hamaya, Taizoh Sadoh, Masanobu Miyao

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Abstract

We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe₃Si/Ge(111) and Fe ₂CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe_3-xMn _xSi/Ge(111) (x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.

Original language	English
Pages (from-to)	8461-8467
Number of pages	7
Journal	Thin Solid Films
Volume	519
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2011.05.024
Publication status	Published - Oct 3 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.05.024

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title = "Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)",

abstract = "We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe3Si/Ge(111) and Fe 2CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe3-xMn xSi/Ge(111) (x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.",

author = "Yoshihito Maeda and Kazumasa Narumi and Seiji Sakai and Yoshikazu Terai and Kohei Hamaya and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: The authors would like to acknowledge Dr. K. Ueda (present Toshiba Co. Ltd.) and Dr. Y. Ando of Kyushu University for sample preparation and measurements. A part of this study was supported by a Grant-in-Aid for Scientific Research (B) (grant no. 20360009 ) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan .",

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doi = "10.1016/j.tsf.2011.05.024",

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T1 - Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

AU - Maeda, Yoshihito

AU - Narumi, Kazumasa

AU - Sakai, Seiji

AU - Terai, Yoshikazu

AU - Hamaya, Kohei

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: The authors would like to acknowledge Dr. K. Ueda (present Toshiba Co. Ltd.) and Dr. Y. Ando of Kyushu University for sample preparation and measurements. A part of this study was supported by a Grant-in-Aid for Scientific Research (B) (grant no. 20360009 ) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan .

PY - 2011/10/3

Y1 - 2011/10/3

N2 - We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe3Si/Ge(111) and Fe 2CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe3-xMn xSi/Ge(111) (x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.

AB - We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe3Si/Ge(111) and Fe 2CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe3-xMn xSi/Ge(111) (x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.

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SN - 0040-6090

VL - 519

SP - 8461

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 24

ER -

Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

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