We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe3Si/Ge(111) and Fe 2CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe3-xMn xSi/Ge(111) (x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry