Ion implantation and diffusion behavior of silver in zinc oxide

Isao Sakaguchi; Ken Watanabe; Takeshi Ohgaki; Tsubasa Nakagawa; Shunichi Hishita; Yutaka Adachi; Naoki Ohashi; Hajime Haneda

doi:10.2109/jcersj2.118.217

Ion implantation and diffusion behavior of silver in zinc oxide

Isao Sakaguchi, Ken Watanabe, Takeshi Ohgaki, Tsubasa Nakagawa, Shunichi Hishita, Yutaka Adachi, Naoki Ohashi, Hajime Haneda

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Silver implantation (75 keV, 2 × 10¹⁴ ions/cm²) in ZnO ceramics was carried out at room temperature to characterize the diffusion phenomenon. Annealing caused Ag evaporation from the sample. Results suggest that it is difficult to incorporate Ag into Zn site by annealing. The Ag profile with the monotonous decrease in concentration below 3 × 10 ¹⁷/cm³ was observed in ZnO annealed at 900°C. Above results become the basic results for producing the ZnO sensor used the reaction at surface and the grain boundary.

Original language	English
Pages (from-to)	217-219
Number of pages	3
Journal	Journal of the Ceramic Society of Japan
Volume	118
Issue number	1375
DOIs	https://doi.org/10.2109/jcersj2.118.217
Publication status	Published - Mar 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Ion implantation and diffusion behavior of silver in zinc oxide",

abstract = "Silver implantation (75 keV, 2 × 1014 ions/cm2) in ZnO ceramics was carried out at room temperature to characterize the diffusion phenomenon. Annealing caused Ag evaporation from the sample. Results suggest that it is difficult to incorporate Ag into Zn site by annealing. The Ag profile with the monotonous decrease in concentration below 3 × 10 17/cm3 was observed in ZnO annealed at 900°C. Above results become the basic results for producing the ZnO sensor used the reaction at surface and the grain boundary.",

author = "Isao Sakaguchi and Ken Watanabe and Takeshi Ohgaki and Tsubasa Nakagawa and Shunichi Hishita and Yutaka Adachi and Naoki Ohashi and Hajime Haneda",

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doi = "10.2109/jcersj2.118.217",

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AU - Sakaguchi, Isao

AU - Watanabe, Ken

AU - Ohgaki, Takeshi

AU - Nakagawa, Tsubasa

AU - Hishita, Shunichi

AU - Adachi, Yutaka

AU - Ohashi, Naoki

AU - Haneda, Hajime

PY - 2010/3

Y1 - 2010/3

N2 - Silver implantation (75 keV, 2 × 1014 ions/cm2) in ZnO ceramics was carried out at room temperature to characterize the diffusion phenomenon. Annealing caused Ag evaporation from the sample. Results suggest that it is difficult to incorporate Ag into Zn site by annealing. The Ag profile with the monotonous decrease in concentration below 3 × 10 17/cm3 was observed in ZnO annealed at 900°C. Above results become the basic results for producing the ZnO sensor used the reaction at surface and the grain boundary.

AB - Silver implantation (75 keV, 2 × 1014 ions/cm2) in ZnO ceramics was carried out at room temperature to characterize the diffusion phenomenon. Annealing caused Ag evaporation from the sample. Results suggest that it is difficult to incorporate Ag into Zn site by annealing. The Ag profile with the monotonous decrease in concentration below 3 × 10 17/cm3 was observed in ZnO annealed at 900°C. Above results become the basic results for producing the ZnO sensor used the reaction at surface and the grain boundary.

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Ion implantation and diffusion behavior of silver in zinc oxide

Abstract

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