ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.

Tanemasa Asano, Hiroshi Ishiwara, Kouzo Orihara

Research output: Contribution to conferencePaper

Abstract

In order to fabricate electronic devices in the Si/CaF//2/Si structures, it is necessary to investigate ion irradiation effects in CaF//2 films, since ion beam processes such as ion implantation are often used in the device fabrication. In the present work, radiation damage in epitaxial CaF//2 films on Si substrates produced by Ar** plus ion implantation and its annealing behavior are investigated.

Original languageEnglish
Pages1845-1848
Number of pages4
Publication statusPublished - Dec 1 1983

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Asano, T., Ishiwara, H., & Orihara, K. (1983). ION IRRADIATION DAMAGE IN EPITAXIAL CaF//2 ON Si.. 1845-1848.