In order to fabricate electronic devices in the Si/CaF//2/Si structures, it is necessary to investigate ion irradiation effects in CaF//2 films, since ion beam processes such as ion implantation are often used in the device fabrication. In the present work, radiation damage in epitaxial CaF//2 films on Si substrates produced by Ar** plus ion implantation and its annealing behavior are investigated.
|Number of pages||4|
|Publication status||Published - Dec 1 1983|
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