Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

Original languageEnglish
Pages (from-to)739-741
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, B
Volume39
Issue number1-4
DOIs
Publication statusPublished - Mar 2 1989

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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