Abstract
Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.
| Original language | English |
|---|---|
| Pages (from-to) | 739-741 |
| Number of pages | 3 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 39 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Mar 2 1989 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Ion-irradiation-enhanced dissolution of epitaxial fluoride films : A new class of inorganic single-crystal ion resist. / Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 39, No. 1-4, 02.03.1989, p. 739-741.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ion-irradiation-enhanced dissolution of epitaxial fluoride films
T2 - A new class of inorganic single-crystal ion resist
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Furukawa, Seijiro
PY - 1989/3/2
Y1 - 1989/3/2
N2 - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.
AB - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.
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U2 - 10.1016/0168-583X(89)90887-2
DO - 10.1016/0168-583X(89)90887-2
M3 - Article
AN - SCOPUS:0024621681
VL - 39
SP - 739
EP - 741
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -