Ion-irradiation-enhanced dissolution of epitaxial fluoride films

A new class of inorganic single-crystal ion resist

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

Original languageEnglish
Pages (from-to)739-741
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, B
Volume39
Issue number1-4
DOIs
Publication statusPublished - Mar 2 1989
Externally publishedYes

Fingerprint

Ion bombardment
ion irradiation
fluorides
dissolving
Dissolution
Single crystals
Oxygen
Epitaxial films
single crystals
Ions
Ion implantation
Etching
dosage
ions
Optical properties
oxygen plasma
Plasmas
Hydrogen
Acids
ion implantation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Ion-irradiation-enhanced dissolution of epitaxial fluoride films : A new class of inorganic single-crystal ion resist. / Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 39, No. 1-4, 02.03.1989, p. 739-741.

Research output: Contribution to journalArticle

@article{4336db7c0ee04c41b9f308ea23f2a0ba,
title = "Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist",
abstract = "Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.",
author = "Tanemasa Asano and Hiroshi Ishiwara and Seijiro Furukawa",
year = "1989",
month = "3",
day = "2",
doi = "10.1016/0168-583X(89)90887-2",
language = "English",
volume = "39",
pages = "739--741",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Ion-irradiation-enhanced dissolution of epitaxial fluoride films

T2 - A new class of inorganic single-crystal ion resist

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

PY - 1989/3/2

Y1 - 1989/3/2

N2 - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

AB - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

UR - http://www.scopus.com/inward/record.url?scp=0024621681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024621681&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(89)90887-2

DO - 10.1016/0168-583X(89)90887-2

M3 - Article

VL - 39

SP - 739

EP - 741

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -