Ion-to-CH 3 flux ratio in diamond chemical-vapor deposition

Kungen Tsutsui, Masaru Hori, Toshio Goto

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Methyl radicals (CH 3) and positive ionic species in a low-pressure inductively coupled plasma under diamond-depositing conditions have been detected by using a quadrupole mass spectrometer. Absolute calibration of the fluxes of CH 3 and ionic species was made by the threshold ionization technique and Langmuir probe measurement, respectively. The CH 3 density increased by two to three times with a small addition of carbon monoxide to a methane-hydrogen plasma and was on the order of 10 11-10 12 cm -3. As the pressure decreased from 60 to 10 mTorr, the ion-to-CH 3 flux ratio increased from 0.2 to 4.3, accompanied by an increase in the fraction of light ions such as H x + (x=1-3). The average ion energy in the ion energy distribution at a grounded electrode was compared with the sheath potential and the discrepancy was found to be 0.5-2 eV depending on pressure and ion mass. The results were used to describe the specific surface process dominated by energetic (∼ several eV) ions rather than thermal neutrals.

Original languageEnglish
Pages (from-to)4103-4108
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number7
DOIs
Publication statusPublished - Oct 1 2002
Externally publishedYes

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diamonds
vapor deposition
methylidyne
ions
light ions
hydrogen plasma
electrostatic probes
sheaths
carbon monoxide
mass spectrometers
energy distribution
methane
low pressure
quadrupoles
ionization
thresholds
electrodes
probes
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ion-to-CH 3 flux ratio in diamond chemical-vapor deposition. / Tsutsui, Kungen; Hori, Masaru; Goto, Toshio.

In: Journal of Applied Physics, Vol. 92, No. 7, 01.10.2002, p. 4103-4108.

Research output: Contribution to journalArticle

Tsutsui, Kungen ; Hori, Masaru ; Goto, Toshio. / Ion-to-CH 3 flux ratio in diamond chemical-vapor deposition. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 7. pp. 4103-4108.
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