Iron disilicide formation by Au-Si eutectic reaction on Si substrate

Kensuke Akiyama; Satoru Kaneko; Kazuya Yokomizo; Masaru Itakura

doi:10.1016/j.apsusc.2009.05.168

Iron disilicide formation by Au-Si eutectic reaction on Si substrate

Kensuke Akiyama, Satoru Kaneko, Kazuya Yokomizo, Masaru Itakura

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi ₂ 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi ₂ grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi ₂ and β-FeSi ₂ .

Original language	English
Pages (from-to)	1244-1248
Number of pages	5
Journal	Applied Surface Science
Volume	256
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2009.05.168
Publication status	Published - Nov 30 2009

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Iron disilicide formation by Au-Si eutectic reaction on Si substrate",

abstract = " We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .",

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T1 - Iron disilicide formation by Au-Si eutectic reaction on Si substrate

AU - Akiyama, Kensuke

AU - Kaneko, Satoru

AU - Yokomizo, Kazuya

AU - Itakura, Masaru

PY - 2009/11/30

Y1 - 2009/11/30

N2 - We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .

AB - We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .

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JO - Applied Surface Science

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Iron disilicide formation by Au-Si eutectic reaction on Si substrate

Abstract

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