Iron disilicide formation by Au-Si eutectic reaction on Si substrate

Kensuke Akiyama, Satoru Kaneko, Kazuya Yokomizo, Masaru Itakura

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .

Original languageEnglish
Pages (from-to)1244-1248
Number of pages5
JournalApplied Surface Science
Volume256
Issue number4
DOIs
Publication statusPublished - Nov 30 2009

Fingerprint

Eutectics
Iron
Photoluminescence
Substrates
Full width at half maximum
Crystal orientation
Transmission electron microscopy
X ray diffraction
Crystals
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Iron disilicide formation by Au-Si eutectic reaction on Si substrate. / Akiyama, Kensuke; Kaneko, Satoru; Yokomizo, Kazuya; Itakura, Masaru.

In: Applied Surface Science, Vol. 256, No. 4, 30.11.2009, p. 1244-1248.

Research output: Contribution to journalArticle

Akiyama, Kensuke ; Kaneko, Satoru ; Yokomizo, Kazuya ; Itakura, Masaru. / Iron disilicide formation by Au-Si eutectic reaction on Si substrate. In: Applied Surface Science. 2009 ; Vol. 256, No. 4. pp. 1244-1248.
@article{e77da82918e14c6daf43f8367f21cdff,
title = "Iron disilicide formation by Au-Si eutectic reaction on Si substrate",
abstract = "We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .",
author = "Kensuke Akiyama and Satoru Kaneko and Kazuya Yokomizo and Masaru Itakura",
year = "2009",
month = "11",
day = "30",
doi = "10.1016/j.apsusc.2009.05.168",
language = "English",
volume = "256",
pages = "1244--1248",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Iron disilicide formation by Au-Si eutectic reaction on Si substrate

AU - Akiyama, Kensuke

AU - Kaneko, Satoru

AU - Yokomizo, Kazuya

AU - Itakura, Masaru

PY - 2009/11/30

Y1 - 2009/11/30

N2 - We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .

AB - We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .

UR - http://www.scopus.com/inward/record.url?scp=70749151588&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70749151588&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2009.05.168

DO - 10.1016/j.apsusc.2009.05.168

M3 - Article

AN - SCOPUS:70749151588

VL - 256

SP - 1244

EP - 1248

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 4

ER -