Iron disilicide formation by Au-Si eutectic reaction on Si substrate

Kensuke Akiyama, Satoru Kaneko, Kazuya Yokomizo, Masaru Itakura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2 004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2 .

Original languageEnglish
Pages (from-to)1244-1248
Number of pages5
JournalApplied Surface Science
Volume256
Issue number4
DOIs
Publication statusPublished - Nov 30 2009

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Iron disilicide formation by Au-Si eutectic reaction on Si substrate'. Together they form a unique fingerprint.

  • Cite this