Iron in p-type silicon

A comprehensive model

Song Zhao, Aimée L. Smith, Sang H. Ahn, Gerd J. Norga, Marlene T. Platero, Hiroshi Nakashima, Lucy V.C. Assali, Jürgen Michel, Lionel C. Kimerling

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Contamination by transition metal impurities is a major concern in Si processing. The bulk contamination tendency is measured as the product of the metal ion diffusivity and its solubility in Si under processing conditions. In particular, iron (Fe) is incorporated as a highly mobile and soluble (Fei+) species. Surface contamination during wafer cleaning is driven by liquid-solid equilibria dictated by the choice of cleaning solution. In Si solid solution Fe is a near-midgap recombination center. Due to its high mobility Fe in solution in p-Si normally exists in the form of an ion-pair with a negatively charged acceptor ion. Gettering, the removal of Fe from active device regions, is accomplished by designing remote regions of lower chemical potential (segregation gettering) or with a high density of heterogeneous nuclei for precipitation (relaxation gettering). This paper presents a comprehensive model for the deposition of Fe from liquid solution, the ion pair structure and stability, and the gettering of Fe from p/p+ epilayers.

    Original languageEnglish
    Pages (from-to)429-436
    Number of pages8
    JournalMaterials Science Forum
    Volume258-263
    Issue numberPART 1
    Publication statusPublished - Dec 1 1997

    Fingerprint

    Silicon
    contamination
    Contamination
    Iron
    Ions
    iron
    cleaning
    Cleaning
    silicon
    remote regions
    ions
    Epilayers
    Chemical potential
    Liquids
    liquids
    Processing
    diffusivity
    Transition metals
    Metal ions
    Solid solutions

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Zhao, S., Smith, A. L., Ahn, S. H., Norga, G. J., Platero, M. T., Nakashima, H., ... Kimerling, L. C. (1997). Iron in p-type silicon: A comprehensive model. Materials Science Forum, 258-263(PART 1), 429-436.

    Iron in p-type silicon : A comprehensive model. / Zhao, Song; Smith, Aimée L.; Ahn, Sang H.; Norga, Gerd J.; Platero, Marlene T.; Nakashima, Hiroshi; Assali, Lucy V.C.; Michel, Jürgen; Kimerling, Lionel C.

    In: Materials Science Forum, Vol. 258-263, No. PART 1, 01.12.1997, p. 429-436.

    Research output: Contribution to journalArticle

    Zhao, S, Smith, AL, Ahn, SH, Norga, GJ, Platero, MT, Nakashima, H, Assali, LVC, Michel, J & Kimerling, LC 1997, 'Iron in p-type silicon: A comprehensive model', Materials Science Forum, vol. 258-263, no. PART 1, pp. 429-436.
    Zhao S, Smith AL, Ahn SH, Norga GJ, Platero MT, Nakashima H et al. Iron in p-type silicon: A comprehensive model. Materials Science Forum. 1997 Dec 1;258-263(PART 1):429-436.
    Zhao, Song ; Smith, Aimée L. ; Ahn, Sang H. ; Norga, Gerd J. ; Platero, Marlene T. ; Nakashima, Hiroshi ; Assali, Lucy V.C. ; Michel, Jürgen ; Kimerling, Lionel C. / Iron in p-type silicon : A comprehensive model. In: Materials Science Forum. 1997 ; Vol. 258-263, No. PART 1. pp. 429-436.
    @article{337d177baaa8456fb4ce842b0fd7715a,
    title = "Iron in p-type silicon: A comprehensive model",
    abstract = "Contamination by transition metal impurities is a major concern in Si processing. The bulk contamination tendency is measured as the product of the metal ion diffusivity and its solubility in Si under processing conditions. In particular, iron (Fe) is incorporated as a highly mobile and soluble (Fei+) species. Surface contamination during wafer cleaning is driven by liquid-solid equilibria dictated by the choice of cleaning solution. In Si solid solution Fe is a near-midgap recombination center. Due to its high mobility Fe in solution in p-Si normally exists in the form of an ion-pair with a negatively charged acceptor ion. Gettering, the removal of Fe from active device regions, is accomplished by designing remote regions of lower chemical potential (segregation gettering) or with a high density of heterogeneous nuclei for precipitation (relaxation gettering). This paper presents a comprehensive model for the deposition of Fe from liquid solution, the ion pair structure and stability, and the gettering of Fe from p/p+ epilayers.",
    author = "Song Zhao and Smith, {Aim{\'e}e L.} and Ahn, {Sang H.} and Norga, {Gerd J.} and Platero, {Marlene T.} and Hiroshi Nakashima and Assali, {Lucy V.C.} and J{\"u}rgen Michel and Kimerling, {Lionel C.}",
    year = "1997",
    month = "12",
    day = "1",
    language = "English",
    volume = "258-263",
    pages = "429--436",
    journal = "Materials Science Forum",
    issn = "0255-5476",
    publisher = "Trans Tech Publications",
    number = "PART 1",

    }

    TY - JOUR

    T1 - Iron in p-type silicon

    T2 - A comprehensive model

    AU - Zhao, Song

    AU - Smith, Aimée L.

    AU - Ahn, Sang H.

    AU - Norga, Gerd J.

    AU - Platero, Marlene T.

    AU - Nakashima, Hiroshi

    AU - Assali, Lucy V.C.

    AU - Michel, Jürgen

    AU - Kimerling, Lionel C.

    PY - 1997/12/1

    Y1 - 1997/12/1

    N2 - Contamination by transition metal impurities is a major concern in Si processing. The bulk contamination tendency is measured as the product of the metal ion diffusivity and its solubility in Si under processing conditions. In particular, iron (Fe) is incorporated as a highly mobile and soluble (Fei+) species. Surface contamination during wafer cleaning is driven by liquid-solid equilibria dictated by the choice of cleaning solution. In Si solid solution Fe is a near-midgap recombination center. Due to its high mobility Fe in solution in p-Si normally exists in the form of an ion-pair with a negatively charged acceptor ion. Gettering, the removal of Fe from active device regions, is accomplished by designing remote regions of lower chemical potential (segregation gettering) or with a high density of heterogeneous nuclei for precipitation (relaxation gettering). This paper presents a comprehensive model for the deposition of Fe from liquid solution, the ion pair structure and stability, and the gettering of Fe from p/p+ epilayers.

    AB - Contamination by transition metal impurities is a major concern in Si processing. The bulk contamination tendency is measured as the product of the metal ion diffusivity and its solubility in Si under processing conditions. In particular, iron (Fe) is incorporated as a highly mobile and soluble (Fei+) species. Surface contamination during wafer cleaning is driven by liquid-solid equilibria dictated by the choice of cleaning solution. In Si solid solution Fe is a near-midgap recombination center. Due to its high mobility Fe in solution in p-Si normally exists in the form of an ion-pair with a negatively charged acceptor ion. Gettering, the removal of Fe from active device regions, is accomplished by designing remote regions of lower chemical potential (segregation gettering) or with a high density of heterogeneous nuclei for precipitation (relaxation gettering). This paper presents a comprehensive model for the deposition of Fe from liquid solution, the ion pair structure and stability, and the gettering of Fe from p/p+ epilayers.

    UR - http://www.scopus.com/inward/record.url?scp=3743080427&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=3743080427&partnerID=8YFLogxK

    M3 - Article

    VL - 258-263

    SP - 429

    EP - 436

    JO - Materials Science Forum

    JF - Materials Science Forum

    SN - 0255-5476

    IS - PART 1

    ER -