Island formation of SiC film on striated Si(001) substrates

Yoshimine Kato, Kazuo Sakumoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsTakashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
PublisherTrans Tech Publications Ltd
Pages227-230
Number of pages4
ISBN (Print)9780878493579
Publication statusPublished - Jan 1 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kato, Y., & Sakumoto, K. (2009). Island formation of SiC film on striated Si(001) substrates. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 227-230). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.