Joule heating of field emitter tip fabricated on glass substrate

Katsuya Higa, Tanemasa Asano

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The increase in temperature during the operation of an array of Si field emitters fabricated on a glass substrate was investigated. A field emitter having a very high aspect ratio was prepared by the anodization of silicon. The results show that significant Joule heating due to emission current flow takes place at the emitter tip during electron emission, resulting in changes in field emission characteristics and the melting of the apex of the silicon tip when emitters are fabricated on a glass substrate.

Original languageEnglish
Pages (from-to)2749-2750
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number5 A
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes

Fingerprint

Joule heating
emitters
Glass
Silicon
glass
Electron emission
Substrates
Field emission
Aspect ratio
Melting
silicon
high aspect ratio
electron emission
field emission
apexes
melting
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Joule heating of field emitter tip fabricated on glass substrate. / Higa, Katsuya; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 5 A, 01.01.2004, p. 2749-2750.

Research output: Contribution to journalArticle

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