Joule heating of field emitter tip fabricated on glass substrate

K. Higa, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Field emitters on glass substrate are highly attractive for the development of field emission display. Needlelike Si field emitter tips having very high aspect ratio can be fabricated by applying anodization to Si having optimally designed pn junction at the surface. In previous MNC, we have demonstrated a novel device transfer technique which can fabricated Si field emitter tips on glass substrate. The array of field emitter tips thus fabricated operated well and luminescence of phosphor screen due to field emitter was demonstrated. On the other hand, recent study of field emission from the needlelike Si tips fabricated on glass substrate has shown a hysteresis in current-voltage characteristics. The hysteresis is peculiar to the tips on glass substrate. The characteristics observed have suggested the occurrence of significant Joule heating while field emission. In fact, at high current operation, the apex of the emitter tip observed to be melted. The Joule heating of emitter tip formed on the glass substrate having low-thermal-conductivity gets importance from the viewpoint of both emission characteristic and reliability. In this report, measurement of temperature rise at the emitter during electron emission is carried out and we elucidate the Joule heating from field emitter tip on the glass substrate.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages336-337
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: Nov 6 2002Nov 8 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period11/6/0211/8/02

Fingerprint

Joule heating
Glass
Substrates
Field emission
Hysteresis
Field emission displays
Electron emission
Current voltage characteristics
Phosphors
Luminescence
Aspect ratio
Thermal conductivity

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Higa, K., & Asano, T. (2002). Joule heating of field emitter tip fabricated on glass substrate. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 336-337). [1178680] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178680

Joule heating of field emitter tip fabricated on glass substrate. / Higa, K.; Asano, Tanemasa.

2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 336-337 1178680.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Higa, K & Asano, T 2002, Joule heating of field emitter tip fabricated on glass substrate. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178680, Institute of Electrical and Electronics Engineers Inc., pp. 336-337, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 11/6/02. https://doi.org/10.1109/IMNC.2002.1178680
Higa K, Asano T. Joule heating of field emitter tip fabricated on glass substrate. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 336-337. 1178680 https://doi.org/10.1109/IMNC.2002.1178680
Higa, K. ; Asano, Tanemasa. / Joule heating of field emitter tip fabricated on glass substrate. 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 336-337
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