TY - GEN
T1 - K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor
AU - Mansour, Islam
AU - Mosalam, H.
AU - Allam, Ahmed
AU - Abdel-Rahman, Adel B.
AU - Pokharel, Ramesh K.
PY - 2016/12/16
Y1 - 2016/12/16
N2 - Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.
AB - Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.
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U2 - 10.1109/ICUWB.2016.7790505
DO - 10.1109/ICUWB.2016.7790505
M3 - Conference contribution
AN - SCOPUS:85011101757
T3 - 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
BT - 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
Y2 - 16 October 2016 through 19 October 2016
ER -