K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor

Islam Mansour, H. Mosalam, Ahmed Allam, Adel B. Abdel-Rahman, Ramesh K. Pokharel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509013173
DOIs
Publication statusPublished - Dec 16 2016
Event16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016 - Nanjing, China
Duration: Oct 16 2016Oct 19 2016

Publication series

Name2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016

Other

Other16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
CountryChina
CityNanjing
Period10/16/1610/19/16

Fingerprint

voltage controlled oscillators
Variable frequency oscillators
inductors
extremely high frequencies
CMOS
Phase noise
Q factors
capacitors
Capacitors
Tuning
tuning
carrier frequencies
figure of merit
power supplies
layouts
Electric power utilization
direct current
output
simulation

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Instrumentation

Cite this

Mansour, I., Mosalam, H., Allam, A., Abdel-Rahman, A. B., & Pokharel, R. K. (2016). K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. In 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016 [7790505] (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICUWB.2016.7790505

K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. / Mansour, Islam; Mosalam, H.; Allam, Ahmed; Abdel-Rahman, Adel B.; Pokharel, Ramesh K.

2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7790505 (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mansour, I, Mosalam, H, Allam, A, Abdel-Rahman, AB & Pokharel, RK 2016, K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. in 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016., 7790505, 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016, Institute of Electrical and Electronics Engineers Inc., 16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016, Nanjing, China, 10/16/16. https://doi.org/10.1109/ICUWB.2016.7790505
Mansour I, Mosalam H, Allam A, Abdel-Rahman AB, Pokharel RK. K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. In 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7790505. (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016). https://doi.org/10.1109/ICUWB.2016.7790505
Mansour, Islam ; Mosalam, H. ; Allam, Ahmed ; Abdel-Rahman, Adel B. ; Pokharel, Ramesh K. / K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016).
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N2 - Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.

AB - Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.

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