K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor

Islam Mansour; H. Mosalam; Ahmed Allam; Adel B. Abdel-Rahman; Ramesh K. Pokharel

doi:10.1109/ICUWB.2016.7790505

K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor

Islam Mansour, H. Mosalam, Ahmed Allam, Adel B. Abdel-Rahman, Ramesh K. Pokharel

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoM_t of this VCO are -183 dBc/Hz and -187 dBc/Hz.

Original language	English
Title of host publication	2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509013173
DOIs	https://doi.org/10.1109/ICUWB.2016.7790505
Publication status	Published - Dec 16 2016
Event	16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016 - Nanjing, China Duration: Oct 16 2016 → Oct 19 2016

Publication series

Name	2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016

Other

Other	16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016
Country	China
City	Nanjing
Period	10/16/16 → 10/19/16

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Instrumentation

Access to Document

10.1109/ICUWB.2016.7790505

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Cite this

Mansour, I., Mosalam, H., Allam, A., Abdel-Rahman, A. B., & Pokharel, R. K. (2016). K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. In 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016 [7790505] (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICUWB.2016.7790505

K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. / Mansour, Islam; Mosalam, H.; Allam, Ahmed; Abdel-Rahman, Adel B.; Pokharel, Ramesh K.

2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7790505 (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mansour, I, Mosalam, H, Allam, A, Abdel-Rahman, AB & Pokharel, RK 2016, K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. in 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016., 7790505, 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016, Institute of Electrical and Electronics Engineers Inc., 16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016, Nanjing, China, 10/16/16. https://doi.org/10.1109/ICUWB.2016.7790505

Mansour I, Mosalam H, Allam A, Abdel-Rahman AB, Pokharel RK. K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. In 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7790505. (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016). https://doi.org/10.1109/ICUWB.2016.7790505

Mansour, Islam ; Mosalam, H. ; Allam, Ahmed ; Abdel-Rahman, Adel B. ; Pokharel, Ramesh K. / K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor. 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016).

@inproceedings{c4fb2ced10e94ed4bf4b146c8735be29,

title = "K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor",

abstract = "Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.",

author = "Islam Mansour and H. Mosalam and Ahmed Allam and Abdel-Rahman, {Adel B.} and Pokharel, {Ramesh K.}",

year = "2016",

month = dec,

day = "16",

doi = "10.1109/ICUWB.2016.7790505",

language = "English",

series = "2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016",

address = "United States",

note = "16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016 ; Conference date: 16-10-2016 Through 19-10-2016",

}

TY - GEN

T1 - K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor

AU - Mansour, Islam

AU - Mosalam, H.

AU - Allam, Ahmed

AU - Abdel-Rahman, Adel B.

AU - Pokharel, Ramesh K.

PY - 2016/12/16

Y1 - 2016/12/16

N2 - Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.

AB - Low power K-band voltage-controlled oscillator (VCO) using 180nm CMOS technology is presented in this paper. The proposed VCO achieves a wide tuning range from 21.4 to 25.16 GHz by using switched capacitors. The performance of proposed VCO (phase noise, output power and DC power consumption) is improved by designing a new high quality factor inductor that has a shape of figure of eight in 0.18 μm CMOS technology, the quality factor of the proposed inductor is 20.8 at the frequency of interest. Two NMOS switching capacitors to select one of four different frequency. The VCO core consumes 2.7 mA from a power supply of 1.1 V. From the post layout simulation the proposed VCO achieves a wide-frequency tuning range of 21.4-25.16 GHz (16.15%), and a good phase noise of -99 dBc/Hz at 1MHz offset from 25.16 GHz carrier frequency. The calculated figure of merit (FoM) and FoMt of this VCO are -183 dBc/Hz and -187 dBc/Hz.

UR - http://www.scopus.com/inward/record.url?scp=85011101757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85011101757&partnerID=8YFLogxK

U2 - 10.1109/ICUWB.2016.7790505

DO - 10.1109/ICUWB.2016.7790505

M3 - Conference contribution

AN - SCOPUS:85011101757

T3 - 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016

BT - 2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016

Y2 - 16 October 2016 through 19 October 2016

ER -