Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks

Xiuyan Li; Takeaki Yajima; Tomonori Nishimura; Kosuke Nagashio; Akira Toriumi

doi:10.1109/SNW.2014.7348532

Kinetic model for scavenging of SiO₂ interface layer in HfO₂ gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work discusses effects of the substrate on the scavenging of SiO₂ interface layer (SiO₂-IL) in HfO₂ gate stacks. We propose a model that SiO₂-IL scavenging occurs through the reaction of the oxygen vacancy (V_O) transferred from HfO₂ to SiO₂ with oxygen formed at SiO₂/substrate interface.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348532
Publication status	Published - Dec 4 2015
Externally published	Yes
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: Jun 8 2014 → Jun 9 2014

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	6/8/14 → 6/9/14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SNW.2014.7348532

Cite this

Kinetic model for scavenging of SiO₂ interface layer in HfO₂ gate stacks. / Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori et al.

2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348532 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, X, Yajima, T, Nishimura, T, Nagashio, K & Toriumi, A 2015, Kinetic model for scavenging of SiO₂ interface layer in HfO₂ gate stacks. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348532, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 6/8/14. https://doi.org/10.1109/SNW.2014.7348532

@inproceedings{1ab48f96302a4941a9fbbc9692e65ad0,

title = "Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks",

abstract = "This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.",

author = "Xiuyan Li and Takeaki Yajima and Tomonori Nishimura and Kosuke Nagashio and Akira Toriumi",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348532",

language = "English",

series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

address = "United States",

}

TY - GEN

T1 - Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks

AU - Li, Xiuyan

AU - Yajima, Takeaki

AU - Nishimura, Tomonori

AU - Nagashio, Kosuke

AU - Toriumi, Akira

PY - 2015/12/4

Y1 - 2015/12/4

N2 - This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.

AB - This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.

UR - http://www.scopus.com/inward/record.url?scp=84963847117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963847117&partnerID=8YFLogxK

U2 - 10.1109/SNW.2014.7348532

DO - 10.1109/SNW.2014.7348532

M3 - Conference contribution

AN - SCOPUS:84963847117

T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Silicon Nanoelectronics Workshop, SNW 2014

Y2 - 8 June 2014 through 9 June 2014

ER -