Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
DOIs
Publication statusPublished - Dec 4 2015
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: Jun 8 2014Jun 9 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period6/8/146/9/14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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