Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks

Xiuyan Li; Takeaki Yajima; Tomonori Nishimura; Kosuke Nagashio; Akira Toriumi

doi:10.1109/SNW.2014.7348532

Kinetic model for scavenging of SiO₂ interface layer in HfO₂ gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work discusses effects of the substrate on the scavenging of SiO₂ interface layer (SiO₂-IL) in HfO₂ gate stacks. We propose a model that SiO₂-IL scavenging occurs through the reaction of the oxygen vacancy (V_O) transferred from HfO₂ to SiO₂ with oxygen formed at SiO₂/substrate interface.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348532
Publication status	Published - Dec 4 2015
Externally published	Yes
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: Jun 8 2014 → Jun 9 2014

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	6/8/14 → 6/9/14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SNW.2014.7348532

Cite this

Kinetic model for scavenging of SiO₂ interface layer in HfO₂ gate stacks. / Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira.

2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348532 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, X, Yajima, T, Nishimura, T, Nagashio, K & Toriumi, A 2015, Kinetic model for scavenging of SiO₂ interface layer in HfO₂ gate stacks. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348532, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 6/8/14. https://doi.org/10.1109/SNW.2014.7348532

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