TY - GEN
T1 - Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks
AU - Li, Xiuyan
AU - Yajima, Takeaki
AU - Nishimura, Tomonori
AU - Nagashio, Kosuke
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2014 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2015/12/4
Y1 - 2015/12/4
N2 - This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.
AB - This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.
UR - http://www.scopus.com/inward/record.url?scp=84963847117&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963847117&partnerID=8YFLogxK
U2 - 10.1109/SNW.2014.7348532
DO - 10.1109/SNW.2014.7348532
M3 - Conference contribution
AN - SCOPUS:84963847117
T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014
BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Silicon Nanoelectronics Workshop, SNW 2014
Y2 - 8 June 2014 through 9 June 2014
ER -