Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

Y. Inatomi, Y. Kangawa, A. Pimpinelli, T. L. Einstein

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5 Citations (Scopus)

Abstract

Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

Original languageEnglish
Article number013401
JournalPhysical Review Materials
Volume3
Issue number1
DOIs
Publication statusPublished - Jan 2 2019

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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