Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

Y. Inatomi, Yoshihiro Kangawa, A. Pimpinelli, T. L. Einstein

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

Original languageEnglish
Article number013401
JournalPhysical Review Materials
Volume3
Issue number1
DOIs
Publication statusPublished - Jan 2 2019

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Metallorganic vapor phase epitaxy
vapor phase epitaxy
Carbon
Thermodynamics
Partial pressure
thermodynamics
Kinetics
partial pressure
carbon
kinetics
adatoms
tendencies
Thermodynamic properties
thermodynamic properties
Gases
Adsorption
Atoms
adsorption
gases
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy. / Inatomi, Y.; Kangawa, Yoshihiro; Pimpinelli, A.; Einstein, T. L.

In: Physical Review Materials, Vol. 3, No. 1, 013401, 02.01.2019.

Research output: Contribution to journalArticle

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