KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers

Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Toshiaki Nonaka, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show how KrF excimer laser annealing (ELA) can be used as a low temperature annealing process to improve the properties of passivated amorphous InGaZnO thin-film transistors. We analyzed the effect of KrF ELA on the electrical properties, physical structure, chemical bonding and composition of a-InGaZnO.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages53-54
Number of pages2
ISBN (Electronic)9781510845503
Publication statusPublished - Jan 1 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: Dec 9 2015Dec 11 2015

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period12/9/1512/11/15

Fingerprint

Excimer Lasers
Excimer lasers
Thin film transistors
Passivation
Annealing
Amorphous films
Temperature
Electric properties
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Bermundo, J. P., Ishikawa, Y., Fujii, M. N., Nonaka, T., Ikenoue, H., & Uraoka, Y. (2015). KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. In 22nd International Display Workshops, IDW 2015 (pp. 53-54). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.

KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. / Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ikenoue, Hiroshi; Uraoka, Yukiharu.

22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 53-54 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bermundo, JP, Ishikawa, Y, Fujii, MN, Nonaka, T, Ikenoue, H & Uraoka, Y 2015, KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. in 22nd International Display Workshops, IDW 2015. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 53-54, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 12/9/15.
Bermundo JP, Ishikawa Y, Fujii MN, Nonaka T, Ikenoue H, Uraoka Y. KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. In 22nd International Display Workshops, IDW 2015. International Display Workshops. 2015. p. 53-54. (Proceedings of the International Display Workshops).
Bermundo, Juan Paolo ; Ishikawa, Yasuaki ; Fujii, Mami N. ; Nonaka, Toshiaki ; Ikenoue, Hiroshi ; Uraoka, Yukiharu. / KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. 22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. pp. 53-54 (Proceedings of the International Display Workshops).
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