KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers

Juan Paolo Bermundo, Ishikawa Yasuaki, Mami N. Fujii, Nonaka Toshiaki, Ikenoue Hiroshi, Uraoka Yukiharu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show how KrF excimer laser annealing (ELA) can be used as a low temperature annealing process to improve the properties of passivated amorphous InGaZnO thin-film transistors. We analyzed the effect of KrF ELA on the electrical properties, physical structure, chemical bonding and composition of a-lnGaZnO.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages565-566
Number of pages2
ISBN (Electronic)9781510845503
Publication statusPublished - Jan 1 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: Dec 9 2015Dec 11 2015

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period12/9/1512/11/15

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Fingerprint Dive into the research topics of 'KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers'. Together they form a unique fingerprint.

  • Cite this

    Bermundo, J. P., Yasuaki, I., Fujii, M. N., Toshiaki, N., Hiroshi, I., & Yukiharu, U. (2015). KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers. In 22nd International Display Workshops, IDW 2015 (pp. 565-566). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.