Large-area deposition technology of high purity organic thin film by gas flow deposition

Tomohiko Edura, Kohei Tsugita, Chihaya Adachi

Research output: Contribution to journalArticle

Abstract

A gas flow deposition (GFD) system was developed to manufacture large-area organic light-emitting diodes (OLEDs) aimed for displays and lighting applications. Organic materials were thermally evaporated with a flow of heated argon as a carrier gas that transports small molecules through a hearted pass line. The uniform organic vapor flux generated by mixing gas flow was carried to a cool glass substrate surface. The GFD system has some significant advantages: (1) high material utilization efficiency; (2) large area thickness uniformity; and (3) high purity organic thin film. A N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) thin film with a high purity of 99.97% was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost identical with those of the films made by conventional vacuum thermal evaporation (VTE). In addition, good doping concentration controllability was confirmed by the co-deposited film with a thermally activated delayed fluorescence (TADF) material.

Original languageEnglish
Pages (from-to)79-85
Number of pages7
JournalJournal of the Vacuum Society of Japan
Volume58
Issue number3
DOIs
Publication statusPublished - Jan 1 2015

Fingerprint

gas flow
Flow of gases
purity
Thin films
thin films
gas transport
Vacuum evaporation
Thermal evaporation
Argon
controllability
Organic light emitting diodes (OLED)
organic materials
Controllability
illuminating
light emitting diodes
Lighting
Gases
Fluorescence
Display devices
Vapors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces
  • Spectroscopy

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Large-area deposition technology of high purity organic thin film by gas flow deposition. / Edura, Tomohiko; Tsugita, Kohei; Adachi, Chihaya.

In: Journal of the Vacuum Society of Japan, Vol. 58, No. 3, 01.01.2015, p. 79-85.

Research output: Contribution to journalArticle

@article{1836a48be289467ca4e3340e03e4320d,
title = "Large-area deposition technology of high purity organic thin film by gas flow deposition",
abstract = "A gas flow deposition (GFD) system was developed to manufacture large-area organic light-emitting diodes (OLEDs) aimed for displays and lighting applications. Organic materials were thermally evaporated with a flow of heated argon as a carrier gas that transports small molecules through a hearted pass line. The uniform organic vapor flux generated by mixing gas flow was carried to a cool glass substrate surface. The GFD system has some significant advantages: (1) high material utilization efficiency; (2) large area thickness uniformity; and (3) high purity organic thin film. A N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) thin film with a high purity of 99.97{\%} was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost identical with those of the films made by conventional vacuum thermal evaporation (VTE). In addition, good doping concentration controllability was confirmed by the co-deposited film with a thermally activated delayed fluorescence (TADF) material.",
author = "Tomohiko Edura and Kohei Tsugita and Chihaya Adachi",
year = "2015",
month = "1",
day = "1",
doi = "10.3131/jvsj2.58.79",
language = "English",
volume = "58",
pages = "79--85",
journal = "Journal of the Vacuum Society of Japan",
issn = "1882-2398",
publisher = "Vacuum Society of Japan",
number = "3",

}

TY - JOUR

T1 - Large-area deposition technology of high purity organic thin film by gas flow deposition

AU - Edura, Tomohiko

AU - Tsugita, Kohei

AU - Adachi, Chihaya

PY - 2015/1/1

Y1 - 2015/1/1

N2 - A gas flow deposition (GFD) system was developed to manufacture large-area organic light-emitting diodes (OLEDs) aimed for displays and lighting applications. Organic materials were thermally evaporated with a flow of heated argon as a carrier gas that transports small molecules through a hearted pass line. The uniform organic vapor flux generated by mixing gas flow was carried to a cool glass substrate surface. The GFD system has some significant advantages: (1) high material utilization efficiency; (2) large area thickness uniformity; and (3) high purity organic thin film. A N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) thin film with a high purity of 99.97% was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost identical with those of the films made by conventional vacuum thermal evaporation (VTE). In addition, good doping concentration controllability was confirmed by the co-deposited film with a thermally activated delayed fluorescence (TADF) material.

AB - A gas flow deposition (GFD) system was developed to manufacture large-area organic light-emitting diodes (OLEDs) aimed for displays and lighting applications. Organic materials were thermally evaporated with a flow of heated argon as a carrier gas that transports small molecules through a hearted pass line. The uniform organic vapor flux generated by mixing gas flow was carried to a cool glass substrate surface. The GFD system has some significant advantages: (1) high material utilization efficiency; (2) large area thickness uniformity; and (3) high purity organic thin film. A N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) thin film with a high purity of 99.97% was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost identical with those of the films made by conventional vacuum thermal evaporation (VTE). In addition, good doping concentration controllability was confirmed by the co-deposited film with a thermally activated delayed fluorescence (TADF) material.

UR - http://www.scopus.com/inward/record.url?scp=84927144333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84927144333&partnerID=8YFLogxK

U2 - 10.3131/jvsj2.58.79

DO - 10.3131/jvsj2.58.79

M3 - Article

AN - SCOPUS:84927144333

VL - 58

SP - 79

EP - 85

JO - Journal of the Vacuum Society of Japan

JF - Journal of the Vacuum Society of Japan

SN - 1882-2398

IS - 3

ER -