TY - JOUR
T1 - Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays
AU - Fukamachi, Satoru
AU - Solís-Fernández, Pablo
AU - Kawahara, Kenji
AU - Tanaka, Daichi
AU - Otake, Toru
AU - Lin, Yung Chang
AU - Suenaga, Kazu
AU - Ago, Hiroki
N1 - Funding Information:
This work was supported by the JSPS Grant-in-Aid for Scientific Research on Innovative Areas (A) ‘Science of 2.5 Dimensional Materials: Paradigm Shift of Materials Science Toward Future Social Innovation’ (KAKENHI grant nos. 21H05232, 21H05233, 21H05235 and 22H05478); JSPS KAKENHI grant nos. JP18H03864 and JP19K22113; JST CREST grant nos. JPMJCR18I1 and JPMJCR20B1; and the JSPS A3 Foresight Program. Cross-sectional TEM/STEM and low-temperature CL measurements were performed at the Toray Research Center and KOBELCO Research Institute, respectively. The XPS spectra were measured by Y. Miura at the Center of Advanced Instrumental Analysis, Kyushu University. The MoS CVD growth was performed by M. Kuroki and Z. Ma. 2
Publisher Copyright:
© 2023, The Author(s).
PY - 2023
Y1 - 2023
N2 - Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properties of other two-dimensional materials in device structures. However, integrating the material into large-scale two-dimensional heterostructures remains challenging due to the difficulties in synthesizing high-quality large-area multilayer hBN and combining it with other two-dimensional material layers of the same scale. Here we show that centimetre-scale multilayer hBN can be synthesized on iron–nickel alloy foil by chemical vapour deposition, and then used as a substrate and as a surface-protecting layer in graphene field-effect transistors. We also develop an integrated electrochemical transfer and thermal treatment method that allows us to create high-performance graphene/hBN heterostacks. Arrays of graphene field-effect transistors fabricated by conventional and scalable methods show an enhancement in room-temperature carrier mobility when hBN is used as an insulating substrate, and a further increase—up to a value of 10,000 cm2 V−1 s−1—when graphene is encapsulated with another hBN sheet.
AB - Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properties of other two-dimensional materials in device structures. However, integrating the material into large-scale two-dimensional heterostructures remains challenging due to the difficulties in synthesizing high-quality large-area multilayer hBN and combining it with other two-dimensional material layers of the same scale. Here we show that centimetre-scale multilayer hBN can be synthesized on iron–nickel alloy foil by chemical vapour deposition, and then used as a substrate and as a surface-protecting layer in graphene field-effect transistors. We also develop an integrated electrochemical transfer and thermal treatment method that allows us to create high-performance graphene/hBN heterostacks. Arrays of graphene field-effect transistors fabricated by conventional and scalable methods show an enhancement in room-temperature carrier mobility when hBN is used as an insulating substrate, and a further increase—up to a value of 10,000 cm2 V−1 s−1—when graphene is encapsulated with another hBN sheet.
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U2 - 10.1038/s41928-022-00911-x
DO - 10.1038/s41928-022-00911-x
M3 - Article
AN - SCOPUS:85147517777
SN - 2520-1131
JO - Nature Electronics
JF - Nature Electronics
ER -