Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs

Kohei Horii, Katsuhiro Hata, Ruizhi Wang, Wataru Saito, Makoto Takamiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An 8-bit digital gate driver (DGD) using a half-bridge digital-to-analog converter (HB DAC) IC and two power MOSFETs is proposed to enable the output voltage swing of ± 15 V and the large gate current up to 58 A for a 6500 V, 1000 A IGBT module. In the turn-on measurements of IGBT at 3000 V and 1000 A, compared with the conventional single-step gate driving, the proposed active gate driving using DGD reduces the switching loss from 6.9 J to 4.8 J by 30 % at the same current overshoot of 1.3 kA and reduces the current overshoot from 1560 A to 1330 A by 15 % at the same switching loss of 5 J, which clearly shows the advantage of DGD for the 6500 V, 1000 A IGBT module. This paper is the first to demonstrate the advantages of DGD in the high-voltage, large-current IGBT modules.

Original languageEnglish
Title of host publication2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages293-296
Number of pages4
ISBN (Electronic)9781665422017
DOIs
Publication statusPublished - 2022
Event34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
Duration: May 22 2022May 25 2022

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2022-May
ISSN (Print)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Country/TerritoryCanada
CityVancouver
Period5/22/225/25/22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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