Abstract
We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1 inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.
| Original language | English |
|---|---|
| Pages (from-to) | 99-102 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 457-460 |
| Issue number | I |
| DOIs | |
| Publication status | Published - Jan 1 2004 |
| Externally published | Yes |
| Event | Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering