Large diameter and long length growth of SiC single crystal

T. Kato, T. Ohno, F. Hirose, N. Oyanagi, Shinichi Nishizawa, K. Arai

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1 inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
Publication statusPublished - Nov 29 2004
Externally publishedYes
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

Fingerprint

Single crystals
Crystals
Crystallization
Crystal growth
single crystals
crystal growth
Screw dislocations
screw dislocations
crystals
X rays
Topography
seeds
topography
x rays
Full width at half maximum
Synchrotrons
elongation
Elongation
synchrotrons
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, T., Ohno, T., Hirose, F., Oyanagi, N., Nishizawa, S., & Arai, K. (2004). Large diameter and long length growth of SiC single crystal. Materials Science Forum, 457-460(I), 99-102.

Large diameter and long length growth of SiC single crystal. / Kato, T.; Ohno, T.; Hirose, F.; Oyanagi, N.; Nishizawa, Shinichi; Arai, K.

In: Materials Science Forum, Vol. 457-460, No. I, 29.11.2004, p. 99-102.

Research output: Contribution to journalConference article

Kato, T, Ohno, T, Hirose, F, Oyanagi, N, Nishizawa, S & Arai, K 2004, 'Large diameter and long length growth of SiC single crystal', Materials Science Forum, vol. 457-460, no. I, pp. 99-102.
Kato T, Ohno T, Hirose F, Oyanagi N, Nishizawa S, Arai K. Large diameter and long length growth of SiC single crystal. Materials Science Forum. 2004 Nov 29;457-460(I):99-102.
Kato, T. ; Ohno, T. ; Hirose, F. ; Oyanagi, N. ; Nishizawa, Shinichi ; Arai, K. / Large diameter and long length growth of SiC single crystal. In: Materials Science Forum. 2004 ; Vol. 457-460, No. I. pp. 99-102.
@article{ac20a5cb0c2a49ae9601487b1cfc491b,
title = "Large diameter and long length growth of SiC single crystal",
abstract = "We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1 inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.",
author = "T. Kato and T. Ohno and F. Hirose and N. Oyanagi and Shinichi Nishizawa and K. Arai",
year = "2004",
month = "11",
day = "29",
language = "English",
volume = "457-460",
pages = "99--102",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "I",

}

TY - JOUR

T1 - Large diameter and long length growth of SiC single crystal

AU - Kato, T.

AU - Ohno, T.

AU - Hirose, F.

AU - Oyanagi, N.

AU - Nishizawa, Shinichi

AU - Arai, K.

PY - 2004/11/29

Y1 - 2004/11/29

N2 - We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1 inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.

AB - We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1 inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.

UR - http://www.scopus.com/inward/record.url?scp=8744226938&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8744226938&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:8744226938

VL - 457-460

SP - 99

EP - 102

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - I

ER -