Large diameter and long length growth of SiC single crystal

T. Kato, T. Ohno, F. Hirose, N. Oyanagi, S. Nishizawa, K. Arai

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1 inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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