Large domain film of bis(styrilanthracene) derivatives prepared by a simple melt-freezing process and the improvement of field effect hole mobility

Misuzu Kontshi, Katsuhiko Fujita, Tetsuo Tsuisui

Research output: Contribution to journalArticle

Abstract

Bis(styrylanthracene) (BSA) derivatives with long alkyl side chains form thin films consisting of large domains (mm-scale) at room temperature by a simple melt-freezing process. It is revealed by X-ray diffraction that the homogeneous domains are in a single-crystal-like solid state. The film assumes a layered structure with π-π stacking parallel to the film plane. The hole mobility of the field effect transistor composed of the monodomain film is almost two orders of magnitude higher than that of the corresponding amorphous film. This result may be due to π-π stacking developed in the carrier transport direction.

Original languageEnglish
Pages (from-to)4732-4735
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number6 PART 1
DOIs
Publication statusPublished - Jun 13 2008

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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