Large domain film of bis(styrilanthracene) derivatives prepared by a simple melt-freezing process and the improvement of field effect hole mobility

Misuzu Kontshi, Katsuhiko Fujita, Tetsuo Tsuisui

Research output: Contribution to journalArticle

Abstract

Bis(styrylanthracene) (BSA) derivatives with long alkyl side chains form thin films consisting of large domains (mm-scale) at room temperature by a simple melt-freezing process. It is revealed by X-ray diffraction that the homogeneous domains are in a single-crystal-like solid state. The film assumes a layered structure with π-π stacking parallel to the film plane. The hole mobility of the field effect transistor composed of the monodomain film is almost two orders of magnitude higher than that of the corresponding amorphous film. This result may be due to π-π stacking developed in the carrier transport direction.

Original languageEnglish
Pages (from-to)4732-4735
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number6 PART 1
DOIs
Publication statusPublished - Jun 13 2008

Fingerprint

Hole mobility
hole mobility
Freezing
freezing
Derivatives
Carrier transport
Amorphous films
Field effect transistors
Single crystals
X ray diffraction
Thin films
field effect transistors
solid state
single crystals
room temperature
thin films
diffraction
Temperature
x rays

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Large domain film of bis(styrilanthracene) derivatives prepared by a simple melt-freezing process and the improvement of field effect hole mobility. / Kontshi, Misuzu; Fujita, Katsuhiko; Tsuisui, Tetsuo.

In: Japanese Journal of Applied Physics, Vol. 47, No. 6 PART 1, 13.06.2008, p. 4732-4735.

Research output: Contribution to journalArticle

@article{08da5251bde04bc68d06312ce119bba9,
title = "Large domain film of bis(styrilanthracene) derivatives prepared by a simple melt-freezing process and the improvement of field effect hole mobility",
abstract = "Bis(styrylanthracene) (BSA) derivatives with long alkyl side chains form thin films consisting of large domains (mm-scale) at room temperature by a simple melt-freezing process. It is revealed by X-ray diffraction that the homogeneous domains are in a single-crystal-like solid state. The film assumes a layered structure with π-π stacking parallel to the film plane. The hole mobility of the field effect transistor composed of the monodomain film is almost two orders of magnitude higher than that of the corresponding amorphous film. This result may be due to π-π stacking developed in the carrier transport direction.",
author = "Misuzu Kontshi and Katsuhiko Fujita and Tetsuo Tsuisui",
year = "2008",
month = "6",
day = "13",
doi = "10.1143/JJAP.47.4732",
language = "English",
volume = "47",
pages = "4732--4735",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "6 PART 1",

}

TY - JOUR

T1 - Large domain film of bis(styrilanthracene) derivatives prepared by a simple melt-freezing process and the improvement of field effect hole mobility

AU - Kontshi, Misuzu

AU - Fujita, Katsuhiko

AU - Tsuisui, Tetsuo

PY - 2008/6/13

Y1 - 2008/6/13

N2 - Bis(styrylanthracene) (BSA) derivatives with long alkyl side chains form thin films consisting of large domains (mm-scale) at room temperature by a simple melt-freezing process. It is revealed by X-ray diffraction that the homogeneous domains are in a single-crystal-like solid state. The film assumes a layered structure with π-π stacking parallel to the film plane. The hole mobility of the field effect transistor composed of the monodomain film is almost two orders of magnitude higher than that of the corresponding amorphous film. This result may be due to π-π stacking developed in the carrier transport direction.

AB - Bis(styrylanthracene) (BSA) derivatives with long alkyl side chains form thin films consisting of large domains (mm-scale) at room temperature by a simple melt-freezing process. It is revealed by X-ray diffraction that the homogeneous domains are in a single-crystal-like solid state. The film assumes a layered structure with π-π stacking parallel to the film plane. The hole mobility of the field effect transistor composed of the monodomain film is almost two orders of magnitude higher than that of the corresponding amorphous film. This result may be due to π-π stacking developed in the carrier transport direction.

UR - http://www.scopus.com/inward/record.url?scp=55049097356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55049097356&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.4732

DO - 10.1143/JJAP.47.4732

M3 - Article

AN - SCOPUS:55049097356

VL - 47

SP - 4732

EP - 4735

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 PART 1

ER -