Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Masashi Kurosawa; Noriyuki Taoka; Hiroshi Ikenoue; Osamu Nakatsuka; Shigeaki Zaima

doi:10.1063/1.4864627

Large grain growth of Ge-rich Ge_1-_xSn_x (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Masashi Kurosawa, Noriyuki Taoka, Hiroshi Ikenoue, Osamu Nakatsuka, Shigeaki Zaima

Department of Gigaphoton Next GLP

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge_1-_xSn_x (x<0.02) on SiO₂ crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge_0.98Sn_0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

Original language	English
Article number	061901
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4864627
Publication status	Published - Oct 2 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.",

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AU - Kurosawa, Masashi

AU - Taoka, Noriyuki

AU - Ikenoue, Hiroshi

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

PY - 2014/10/2

Y1 - 2014/10/2

N2 - We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

AB - We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

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Large grain growth of Ge-rich Ge_1-_xSn_x (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water

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