Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Masashi Kurosawa, Noriyuki Taoka, Hiroshi Ikenoue, Osamu Nakatsuka, Shigeaki Zaima

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35 Citations (Scopus)


We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

Original languageEnglish
Article number061901
JournalApplied Physics Letters
Issue number6
Publication statusPublished - Oct 2 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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