Abstract
We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.
| Original language | English |
|---|---|
| Article number | 061901 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Oct 2 2014 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water. / Kurosawa, Masashi; Taoka, Noriyuki; Ikenoue, Hiroshi; Nakatsuka, Osamu; Zaima, Shigeaki.
In: Applied Physics Letters, Vol. 104, No. 6, 061901, 02.10.2014.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water
AU - Kurosawa, Masashi
AU - Taoka, Noriyuki
AU - Ikenoue, Hiroshi
AU - Nakatsuka, Osamu
AU - Zaima, Shigeaki
PY - 2014/10/2
Y1 - 2014/10/2
N2 - We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.
AB - We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.
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U2 - 10.1063/1.4864627
DO - 10.1063/1.4864627
M3 - Article
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 061901
ER -