Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Masashi Kurosawa, Noriyuki Taoka, Hiroshi Ikenoue, Osamu Nakatsuka, Shigeaki Zaima

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

Original languageEnglish
Article number061901
JournalApplied Physics Letters
Volume104
Issue number6
DOIs
Publication statusPublished - Oct 2 2014

Fingerprint

laser annealing
pulsed lasers
polycrystals
water
ablation
platforms
air
diffraction
atoms
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water. / Kurosawa, Masashi; Taoka, Noriyuki; Ikenoue, Hiroshi; Nakatsuka, Osamu; Zaima, Shigeaki.

In: Applied Physics Letters, Vol. 104, No. 6, 061901, 02.10.2014.

Research output: Contribution to journalArticle

Kurosawa, Masashi ; Taoka, Noriyuki ; Ikenoue, Hiroshi ; Nakatsuka, Osamu ; Zaima, Shigeaki. / Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water. In: Applied Physics Letters. 2014 ; Vol. 104, No. 6.
@article{2d0bfa15bca441a087489e4818f2bb81,
title = "Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water",
abstract = "We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2{\%}, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68{\%}. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.",
author = "Masashi Kurosawa and Noriyuki Taoka and Hiroshi Ikenoue and Osamu Nakatsuka and Shigeaki Zaima",
year = "2014",
month = "10",
day = "2",
doi = "10.1063/1.4864627",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Large grain growth of Ge-rich Ge1-xSnx (x 0.02) on insulating surfaces using pulsed laser annealing in flowing water

AU - Kurosawa, Masashi

AU - Taoka, Noriyuki

AU - Ikenoue, Hiroshi

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

PY - 2014/10/2

Y1 - 2014/10/2

N2 - We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

AB - We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800nm) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

UR - http://www.scopus.com/inward/record.url?scp=84905028329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905028329&partnerID=8YFLogxK

U2 - 10.1063/1.4864627

DO - 10.1063/1.4864627

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 061901

ER -