Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Ryo Matsumura, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Volume105
Issue number10
DOIs
Publication statusPublished - Sep 8 2014

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melting
insulators
cooling
nucleation
photosensors
crystals
profiles
solidification
transistors
tuning
fabrication
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth. / Matsumura, Ryo; Kato, Ryusuke; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 105, No. 10, 102106, 08.09.2014.

Research output: Contribution to journalArticle

@article{fa5a0cfa61214ab69895322f86b3b330,
title = "Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth",
abstract = "Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7{\%}-20{\%} Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7{\%}-20{\%} Si concentration) with three-dimensionally uniform Si profiles.",
author = "Ryo Matsumura and Ryusuke Kato and Taizoh Sadoh and Masanobu Miyao",
year = "2014",
month = "9",
day = "8",
doi = "10.1063/1.4895512",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

AU - Matsumura, Ryo

AU - Kato, Ryusuke

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2014/9/8

Y1 - 2014/9/8

N2 - Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.

AB - Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of cooling rates (from 2 to 17 °C/s). The growth features of SiGe change dynamically, depending on the cooling rate. A low cooling rate produces large crystals with laterally graded Si concentration profiles caused by significant Si segregation during solidification. In contrast, a high cooling rate suppresses the Si segregation, but small grains form because of high spontaneous nucleation under super-cooling conditions. By tuning of the cooling rate, moderate super-cooling conditions are obtained as a function of the Si concentration. This controls both the Si segregation and the spontaneous nucleation, and produces large SiGe crystals (∼400μm length, 7%-20% Si concentration) with three-dimensionally uniform Si profiles.

UR - http://www.scopus.com/inward/record.url?scp=84907033628&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907033628&partnerID=8YFLogxK

U2 - 10.1063/1.4895512

DO - 10.1063/1.4895512

M3 - Article

AN - SCOPUS:84907033628

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102106

ER -